Transistor and production method thereof

Abstract

The invention provides a transistor and a production method thereof. The production method includes the following steps: a semiconductor substrate is provided; a high K gate medium layer, a metal material layer and a sacrificial material layer are sequentially deposited on the semiconductor substrate; partial sacrificial material layer and partial metal material layer located right under the sacrificial material layer are removed, and a stacked structure comprising the sacrificial material layer and the metal material layer and used for defining the area where a transistor fate is located is formed on the semiconductor substrate; a side wall material layer is deposited on the semiconductor substrate provided with the stacked structure; and the stacked structure and the side wall material layer located above the high K gate medium layer are removed, the side wall material layer remained on two sides of the stacked structure forms side walls of the stacked structure, and the high K gate medium layer not covered by the stacked structure is removed. The high K gate medium layer in the formed transistor cannot cause current leakage so that current switching ratio, Gate Induced Drain Leakage (GIDL) performance and the like of the transistor are improved, and the transistor gate can generate little current leakage.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a transistor and a manufacturing method thereof. Background technique [0002] A common trend in modern integrated circuit fabrication is to produce transistors with very small feature sizes. Many problems have arisen with transistors as their dimensions have become smaller and smaller. For example, a very thin gate dielectric layer causes high gate current leakage; in addition, the material of the transistor gate is generally polysilicon, but the polysilicon gate often causes problems such as polysilicon depletion or boron penetration effect, which will affect the transistor. performance. [0003] Metal is another material used to make transistor gates, and gates made of metal have many advantages over polysilicon gates. For example, metal allows excellent current flow and has fewer voltage drain problems than polysilicon. [0004] A manufacturing method of a trans...

AI Technical Summary

Problems solved by technology

[0005] Dry etching is a method of etching using plasma. During the process of forming the stack structure 6 by dry etching, the plasma will damage the left and right sides of the stack structure 6 exposed to the plasma environment. so as to affect the electrical performance of the transistor

The transistor formed by the above method is detected and found that both sides 2a of the high-K gate dielectric layer 2 in the stacked structure 6 will have a problem of leakage current due to the damage of the plasma, and then the current switching ratio of the transistor (Ion / Ioff), GIDL (Gate Induced Drain Leakage) and other performance degradation, resulting in higher current leakage at the gate of the transistor

Images