Method for producing silicon microneedle arrays with holes and microneedle array

A microneedle array and microneedle technology, applied in the field of microneedle arrays, can solve problems such as high cost

Inactive Publication Date: 2013-06-26
ROBERT BOSCH GMBH
View PDF12 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The known process of manufacturing needles with through-holes for filling the needles from the backside is expensive

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing silicon microneedle arrays with holes and microneedle array
  • Method for producing silicon microneedle arrays with holes and microneedle array
  • Method for producing silicon microneedle arrays with holes and microneedle array

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0032] FIG. 1 shows an arrangement scheme 10 with the positions of the silicon needle array 11 and the laser lens 12. The silicon needle array 11 has needles 13, 14, 15, and 16 on a substrate 17. The laser positions 18, 19, 20, 21 are assigned to the needles 13, 14, 15, 16, respectively. Here, the laser positions 18, 19, 20, 21 are arranged on the side above the needles 13, 14, 15, 16. Using this arrangement 10 of the laser positions 18, 19, 20, 21 on the upper side of the needles 13, 14, 15, 16 to form holes in the substrate 17 from the needle side of the silicon needle array 11, that is, the front side 26 22, 23, 24, 25. In this case, the holes 22, 23, 24, and 25 in the substrate 17 are through holes, and the through holes fluidly connect the front surface 26 of the silicon needle array 11 to its flat side, that is, the back surface 27. The holes 22, 23, 24, 25 are wider on the front side 26 of the silicon needle array 11 than on the back side 27.

[0033] The laser positio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
lengthaaaaaaaaaa
Login to view more

Abstract

A method for producing silicon microneedle arrays with drilled holes includes producing a silicon microneedle array. For each microneedle in a plurality of microneedles in the microneedle array, a laser is positioned relative to a microneedle and a drilled hole is drilled into the microneedle array by laser drilling. The drilled holes are drilled in microneedles, in flanks of the microneedles or alongside microneedles. A microneedle array includes a substrate composed of a micromechanical semiconductor material. The microneedle array has microneedles that project from the substrate and has drilled holes. The microneedles are composed of a porous micromechanical semiconductor material.

Description

Technical field [0001] The invention relates to a method for manufacturing a silicon microneedle array with holes and a microneedle array. Background technique [0002] Microneedle arrays with through holes are used in cosmetics and medicine. There are a large number of processes for making microneedles from metals, polymers and silicon. The method using microsystem technology and other methods are used to manufacture microneedles made of silicon through lithography or masking process and etching method or structuring process. For example, US 2005 011 858 A1, US 2006 172 541 A1 or CN 1 526 454 A also disclose methods for manufacturing silicon microneedle arrays with through holes. All of the aforementioned methods utilize masking and structuring processes in semiconductor manufacturing to create vias. Known processes for manufacturing needles with through holes for filling the needles from the back are expensive. [0003] In addition, JP 2011 072 695 A discloses a method for ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B81C1/00A61M37/00
CPCA61M37/0015A61M2037/0053
Inventor M.斯图伯
Owner ROBERT BOSCH GMBH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap