Growth method of light-emitting diode (LED) epitaxial wafer

Abstract

Disclosed is a growth method of a light-emitting diode (LED) epitaxial wafer. When growth of an N type doped gallium nitride (GaN) layer with silicon (Si) is carried out, a method of alternate growth of the N type doped GaN layer with Si and a U type undoped GaN layer with no Si is adopted. According to the growth method of the LED epitaxial wafer, the thickness of an original N type GaN layer is kept, a doped GaN layer with Si with continuous growth in a traditional growth method is modified into an alternate structure layer formed by the N type doped GaN layer with Si and a U type GaN layer with no doped Si, and usage amount of dopant is saved to a certain degree. In an alternate structure of the N type doped GaN layer with Si and the U type undoped GaN layer with no Si, the doped GaN lay with Si is low in resistance value, and the undoped GaN layer with no Si is high in resistance value. Due to the facts that the doped GaN layer with Si is low in resistance value, and the undoped GaN layer with no Si is high in resistance value, horizontal expansion capacity of electrons is strengthened, and thus a driving voltage is reduced, and meanwhile luminance and a lighting effect are improved.

Description

technical field [0001] The invention relates to a method for growing an LED epitaxial wafer. Background technique [0002] Semiconductor lighting technology is another revolution in lighting sources after incandescent lamps and fluorescent lamps. Semiconductor lighting technology has developed rapidly, has wide application fields, great energy-saving potential, and is green and environmentally friendly. It is recognized as one of the most promising high-tech energy-saving industries, and the core of semiconductor lighting is LED chips. The luminous efficiency of ordinary incandescent lamps is 15lm / W, while the luminous efficacy of LED lamps for lighting can reach more than 100lm / W, that is, a 6-watt LED lamp can replace a 40-watt incandescent lamp. LEDs have shown obvious energy-saving advantages in replacing traditional lighting. Continuously improving the luminous efficiency of LED lights, that is, reducing the voltage and increasing the luminous brightness at the rated d...

AI Technical Summary

Problems solved by technology

Moreover, the traditionally grown N-type GaN layer, because the doped Si concentration is the same, the resistance value of each place is the same

This makes the electron transportation process choose the shortest path for transmission, and there will be a phenomenon of current congestion on the shortest path

At the same time, the current distribution of the entire epitaxial layer is uneven, and the current flowing through the quantum well is relatively concentrated. As a result, the voltage of the chip is high and the light efficiency is low.

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