Heating device used for through silicon via (TSV) fill copper residual stress measurement

Abstract

The utility model provides a heating device used for through silicon via (TSV) fill copper residual stress measurement and belongs to the technical field of encapsulation equipment. The heating device comprises a clamp part, a heating part and a platform deck adjusting part. A guide rail structure on a clamp is capable of achieving measurement of extrusion stress of all copper cylinders on a TSV pinboard with card mount for one time, and a gap in the undersurface of the guide rail is capable of achieving measurement of extrusion stress of a row of copper cylinders with adjustment of the position of the TSV pinboard for one time, so that centering of the copper cylinders and through holes in the platform deck are enabled to be simple and accurate, an experiment process is greatly simplified, and experiment cost is saved. By means of a positioning spring piece structure, positioning of the TSV pinboard in the horizontal direction and the vertical direction is achieved, and the TSV pinboard is enabled to slide on a plane. The positioning spring piece structure is simple in structure and convenient to use. The heating device used for TSV fill copper residual stress measurement is capable of heating a sample, and the heating part can accurately control the temperature of the sample. Additional stress caused by different coefficients of thermal expansion of the sample and the clamp material when the sample is heated can be effectively eliminated through a fastening spring piece and the positioning spring piece on the clamp.

Description

technical field [0001] The invention relates to the residual stress test technology of the TSV electroplating copper process in the advanced three-dimensional electronic packaging technology and the stress test technology of the composite material reinforced fiber and matrix interface. Background technique [0002] In an experiment aimed at testing the process residual stress generated by TSV-Cu during the manufacturing process, it is necessary to obtain the average shear stress on the Cu-Si interface when the electroplated copper column is pressed out from the TSV through hole and the -The relationship curve between the relative displacements of the TSV through-holes, when loading, the method of slow loading with a small force value is used to make the interface diffuse and slip. In order to make the interface slip more easily during the experiment, it is necessary to heat the sample. figure 1 Schematic diagram of the experimental principle. figure 2 It is a schematic di...

AI Technical Summary

Problems solved by technology

At the same time, because the thermal expansion coefficient of the pattern is very different from that of the fixture, how to ensure that the relative position of the copper column in the pattern and the through hole on the fixture does not change when heating the pattern is a difficult problem to solve

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