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Pattern-recognition-based method for integrating multiple materials on substrate

A pattern recognition and substrate technology, which is applied in the manufacturing of electrical components, electrical solid-state devices, semiconductor/solid-state devices, etc., can solve the problems of large heterogeneity mismatch and high cost of heterogeneity compatibility, reduce growth costs, and avoid crystal lattices. Mismatch and effect of thermal mismatch, easy production cost

Inactive Publication Date: 2013-04-24
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI +1
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  • Abstract
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Problems solved by technology

[0004] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for integrating multiple materials on a substrate based on pattern recognition, which is used to solve the problems between III-V compound semiconductors and compound semiconductors in the prior art. The cost of heterogeneous compatibility with elemental semiconductors (such as Si, Ge) and other semiconductor materials is too high, and there is also a problem of large heterogeneous mismatch

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  • Pattern-recognition-based method for integrating multiple materials on substrate
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Embodiment Construction

[0030] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0031] see Figure 1a to Figure 4b shown. It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be chan...

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Abstract

The invention relates to a pattern-recognition-based method for integrating multiple materials on a substrate. The method comprises the steps that a substrate with a micro well pattern is prepared, and micro units which are complementary with the micro well pattern and are made of different materials are prepared through photoetching and reactive ion etching (RIE) corrosion processes; the substrate with the micro well pattern and micro units which are complementary with the micro well pattern and are made of different materials are put into a container containing acidity assembly fluid, and turbulent flow is generated in the container by using a pulse turbulence system, so that perturbation are produced for the micro units, and the micro units and the substrate with the micro well pattern are integrated into a whole in a self-assembly mode, wherein the micro units and the substrate with the micro well pattern are complementary in shapes; and a structure integrated by different semiconductor materials on a silicon substrate is finally formed, that is multi-semiconductor materials on silicon (MSMOS). The materials formed in a self-assembly mode meet the material demands that Moore's law is continued and exceeded, suggested by an international transactions reporting system (ITRS). Mismatch problem of heterogeneous growth is solved, and meanwhile the integration method of Heterogeneous materials in a self-assembly is simple, and cost is low.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a method for integrating multiple materials on a substrate based on pattern recognition. Background technique [0002] Since Moore's Law was proposed by Gordon Moore in 1965, it has been guiding the development of the world's semiconductor industry to lower costs, higher integration and greater economic benefits. As the dimensions of semiconductor devices continue to shrink, and traditional bulk silicon materials are approaching their physical limits, Moore's Law will no longer apply. In this context, the International Semiconductor Technology Blueprint (ITRS) pointed out in the technology roadmap in 2005 that there are two main trends and characteristics in the development of integrated circuits: first, continue to focus on CMOS technology and advance along Moore's Law, That is, the continuation of Moore's Law (more Moore); on the other hand, the trend of mul...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02
CPCH01L24/95H01L2224/95085
Inventor 狄增峰郭庆磊梅永丰张苗黄高山
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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