Non-planar semiconductor structure and process for same

Abstract

The invention discloses a non-planar semiconductor structure and a process for the same. The non-planar semiconductor structure comprises a substrate, at least two fin-shaped structures, at least one insulating structure and a plurality of epitaxial layers. The fin-shaped structures are positioned on the substrate. The insulating structures are positioned among the fin-shaped structures and are provided with nitrogenous layers. The epitaxial layers respectively cover parts of the fin-shaped structures and are positioned on the nitrogenous layers.

Description

technical field [0001] The invention relates to a semiconductor structure and its technology, in particular to a semiconductor structure and its technology in which a nitrogen-containing layer is formed on the contact surface of an insulating structure and an epitaxial layer. Background technique [0002] As the size of semiconductor devices shrinks, maintaining the performance of small-sized semiconductor devices is a major goal of the industry. In order to improve the performance of semiconductor devices, various Fin-shaped field effect transistors (FinFETs) have been gradually developed. FinFET devices include the following advantages. Firstly, the fin field effect transistor process can be integrated with the traditional logic element process, so it has considerable process compatibility; secondly, because the three-dimensional shape of the fin structure increases the contact area between the gate and the substrate, it can increase The gate controls the charge in the c...

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Problems solved by technology

However, due to the difference in material between the epitaxial layer and the insulating structure, the two will repel each other and cause the epitaxial layer to have a take-off angle of nearly 54.8° of the crystal plane, so that the two cannot be bonded; in other words, because the epitaxial layer will be relatively insulating. Grows upwards at an oblique angle, thus limiting the total volume grown by the epitaxial layer

Furthermore, this structure also makes it difficult for subsequent metal silicides to adhere to it.

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