Semiconductor device and method of manufacturing the same

Abstract

The invention provides a semiconductor device and a method of manufacturing the same. The semiconductor device which provides compactness and enhanced drain withstand voltage. The semiconductor device includes: a gate electrode; a source electrode spaced from the gate electrode; a drain electrode located opposite to the source electrode with respect to the gate electrode in a plan view and spaced from the gate electrode; at least one field plate electrode located between the gate and drain electrodes in a plan view, provided over the semiconductor substrate through an insulating film and spaced from the gate electrode, source electrode and drain electrode; and at least one field plate contact provided in the insulating film, coupling the field plate electrode to the semiconductor substrate. The field plate electrode extends from the field plate contact at least either toward the source electrode or toward the drain electrode in a plan view.

Description

[0001] Cross references to related patent applications [0002] The disclosure of Japanese Patent Application No. 2011-196809 filed on Sep. 9, 2001 including specification, drawings and abstract is incorporated herein by reference in its entirety. technical field [0003] The present invention relates to semiconductor devices and methods of manufacturing semiconductor devices. Background technique [0004] In the field of semiconductor elements such as horizontal power MISFETs, it is necessary to increase the drain withstand voltage. The drain withstand voltage is evaluated based on whether a characteristic change or a breakdown phenomenon occurs in a semiconductor element when a rated voltage is continuously applied to the drain electrode with the gate voltage turned off. A characteristic change or a breakdown phenomenon occurring in a semiconductor element when a voltage is applied to a drain electrode is caused by electric field concentration in the semiconductor element...

AI Technical Summary

Problems solved by technology

Such electric field concentration tends to occur below the drain side end of the gate electrode

Images