Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A method for optical excitation to generate spin-polarized electrons and spin currents

A technology of spin-polarized electrons and spin currents, which is applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of low temperature and low spin polarizability, and facilitate close integration, integration and miniaturization The effect of modernization and strong compatibility

Inactive Publication Date: 2015-08-26
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the optical method is superior to the electrical method in terms of high-speed modulation, the above-mentioned optical method still has problems such as low spin polarizability at room temperature and the need for low temperature.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for optical excitation to generate spin-polarized electrons and spin currents
  • A method for optical excitation to generate spin-polarized electrons and spin currents

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] figure 1 It is a schematic diagram of the principle of Embodiment 1 of the present invention, such as figure 1 As shown, the glass 1 and the air 2 form a total reflection interface 3, and there is a functional layer 4 that generates spin-polarized electrons and spin currents on the interface 3, and the functional layer 4 contains a structure composed of a surface plasmon metal material 5. The light wave 6 is totally reflected from the glass 1 to the interface 3 at an incident angle greater than the critical angle of total reflection. The interaction of the formed structures 5 generates spin-polarized electrons and spin currents in the functional layer 4 .

[0032] The structure 5 made of surface plasmon metal material in the functional layer 4 can be but not limited to the following structures:

[0033] (1) A 30nm thick Au film prepared on the glass surface by electron beam evaporation technology.

[0034] (2) A 200nm thick Al film prepared on the glass surface by v...

Embodiment 2

[0042] figure 2 It is a schematic diagram of the principle of Embodiment 2 of the present invention, such as figure 2 As shown, fiber 7, namely SiO 2 The medium and the air 2 form a total reflection interface 3, on which there is a functional layer 4 that generates spin-polarized electrons and spin currents, and the functional layer 4 includes a structure 5 composed of a surface plasmon metal material. The light wave 6 is transmitted in the optical fiber 7 in the form of total reflection, and multiple total reflections occur on the interface 3. The evanescent wave (or evanescent wave) generated by the total reflection and the surface plasmon metal material in the functional layer 4 are used to The interaction of the formed structures 5 generates spin-polarized electrons and spin currents in the functional layer 4 .

[0043] The structure 5 made of the surface plasmon metal material in the functional layer 4 is the same as in the first embodiment.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an optical excitation method for generating spin-polarized electrons and spin current. Through interaction between an evanescent wave generated by optical total reflection on an interface and a structure which is included by a functional layer generating the spin-polarized electrons and the spin current on the interface, is made of a surface plasmon metal material and has a nanometer characteristic size, a surface plasmon is excited, so that surface free electrons in resonance transition generate spin precession in an effective surface magnetic field of the structure made of the surface plasmon metal material to form a common spin magnetic moment component so as to generate the spin-polarized electrons in the functional layer generating the spin-polarized electrons and thus form the spin current along with spreading of the surface Plasmon on the surface (or interface).

Description

technical field [0001] The invention relates to the field of electronic spin devices, in particular to a method for generating spin polarized electrons and spin current. Background technique [0002] Spin-based electronic devices have become a development trend of electronic devices due to their advantages in non-volatility, fast data processing speed, high integration density and low power consumption. Currently, there are two main methods for generating spin-polarized electrons and spin currents: electrical methods and optical methods. The electrical methods mainly include: (1) Spin diffusion transport. Polarized electrons are introduced through the ferromagnetic metal as an electrode, that is, an ohmic contact is formed at the interface between the ferromagnetic metal and the semiconductor material, and the spin-polarized current in the ferromagnetic metal is introduced into the semiconductor material under the drive of the electric field. The injection efficiency is lo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/66
Inventor 闫存极韩立顾文琪
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products