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Low-etch cleaning fluid for photoresist

A technology of cleaning solution and photoresist, which is applied in the field of cleaning solution, can solve the problems of corrosivity of wafer patterns and substrates, insufficient cleaning ability, etc., and achieve the effect of strong corrosion inhibition ability

Inactive Publication Date: 2013-03-06
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a photoresist cleaning solution with strong cleaning ability and strong corrosion resistance to semiconductor wafers, aiming at the insufficient cleaning ability of the existing photoresist cleaning solution or the defects of strong corrosion to wafer patterns and substrates. Less pattern and substrate corrosive photoresist cleaner

Method used

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  • Low-etch cleaning fluid for photoresist
  • Low-etch cleaning fluid for photoresist
  • Low-etch cleaning fluid for photoresist

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Embodiment Construction

[0022] The advantages of the present invention will be further elaborated below through specific embodiments.

[0023] Component and content of cleaning agent in each embodiment of table 1

[0024]

[0025]

[0026] In order to further investigate the cleaning situation of this type of cleaning solution, the present invention adopts the following technical means: the wafer that is about to contain positive photoresist (thickness is about 20 microns, and through exposure and etching) is immersed in the cleaning agent, at 25 ~ Oscillate for 5-60 minutes with a constant temperature oscillator at a vibration frequency of about 60 rpm at 90°C, then wash with deionized water and blow dry with high-purity nitrogen. The cleaning effect of the photoresist and the corrosion situation of the wafer by the cleaning solution are shown in Table 2.

[0027] Table 2. The wafer cleaning situation of comparative embodiment and some embodiments

[0028]

[0029] Corrosion: ◎Basically n...

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Abstract

The invention discloses a low-etch cleaning fluid for photoresist and compositions thereof. The low-etch cleaning fluid for the photoresist comprises (a) quaternary ammonium hydroxide, (b) polyol containing two or three carbons, (c) polyol containing five or six carbons, (d) water, and (e) other cosolvents. The low-etch cleaning fluid for the photoresist can highly-efficiently remove the photoresist on semiconductor wafers, basically has no attack to base materials such as aluminium, copper, etc., and has good application prospect in the fields of semiconductor wafer cleaning and the like.

Description

technical field [0001] The invention relates to a cleaning solution, in particular to a photoresist cleaning solution. Background technique [0002] In the usual semiconductor manufacturing process, a photoresist mask is formed on the surface of some materials, and the pattern is transferred after exposure. After the required pattern is obtained, the remaining photoresist needs to be peeled off before the next process. . This process requires complete removal of unwanted photoresist without etching any substrate. [0003] At present, the photoresist cleaning solution is mainly composed of polar organic solvents, strong alkali and / or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning solution or rinsing the semiconductor wafer with the cleaning solution. For example, JP1998239865 discloses a cleaning solution, which consists of tetramethylammonium hydroxide (TMAH), dimethyl sulfoxide (DMSO), 1,3-dimethyl-2-i...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 刘兵彭洪修孙广胜
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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