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Photoresist cleaning solution

A technology of cleaning liquid and photoresist, which is applied in the field of cleaning liquid, can solve the problems of insufficient cleaning ability, strong corrosion of wafer patterns and substrates, small operating window, etc., and achieve strong corrosion inhibition ability, strong water resistance, and removal ability strong effect

Inactive Publication Date: 2013-01-30
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a photoresist solution for the existing photoresist cleaning solution, which has insufficient cleaning ability or is highly corrosive to wafer patterns and substrates and has a small operating window. Photoresist cleaning solution with strong cleaning ability and low corrosion to semiconductor wafer patterns and substrates, while providing a large operating window

Method used

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Embodiment Construction

[0014] The present invention will be further described below through specific embodiments.

[0015] The composition and content of the cleaning agent in each embodiment of table 1

[0016]

[0017]

[0018] In order to further investigate the cleaning situation of this type of cleaning solution, the present invention adopts the following technical means: the wafer that is about to contain positive photoresist (thickness is about 20 microns, and through exposure and etching) is immersed in the cleaning agent, at 25 ~ Oscillate for 5-60 minutes with a constant temperature oscillator at a vibration frequency of about 60 rpm at 90°C, then wash with deionized water and blow dry with high-purity nitrogen. The cleaning effect of the photoresist and the corrosion situation of the wafer by the cleaning solution are shown in Table 2.

[0019] Table 2. Wafer cleaning situation of some embodiments

[0020]

[0021]

[0022] Corrosion:

◎Basically no corrosion;

...

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Abstract

The invention discloses a photoresist cleaning solution, which is a non-aqueous low-etching cleaning solution containing alkylol amine, 3-amino-5-mercapto-1, 2, 4-triazole and a cosolvent. The photoresist cleaning solution can be used for removing the photoresist in LED and semiconductors, and at the same time has no aggressivity on a metal substrate such as metallic aluminium, etc. More prominently, the system has strong water resistance, thus broadening the operation window. Therefore, the photoresist cleaning solution has good application prospects in the fields of LED and semiconductor wafer cleaning, etc.

Description

technical field [0001] The invention relates to a cleaning solution, in particular to a photoresist cleaning solution. Background technique [0002] In the usual LED and semiconductor manufacturing processes, a photoresist mask is formed on the surface of some materials, and the pattern is transferred after exposure. After the required pattern is obtained, the remaining photoresist needs to be stripped before the next process. Engraving. This process requires complete removal of unwanted photoresist without etching any substrate. [0003] At present, the photoresist cleaning solution is mainly composed of polar organic solvents, strong alkali and / or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning solution or rinsing the semiconductor wafer with the cleaning solution. One of them is a photoresist cleaning solution containing water, and its water content is generally greater than 5%; as JP1998239865 disclo...

Claims

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Application Information

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IPC IPC(8): G03F7/42
Inventor 刘兵彭洪修孙广胜
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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