Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Solid-state imaging device and camera

一种固态成像器件、像素的技术，应用在电固体器件、半导体器件、电气元件等方向，达到电容减小、转换效率增大、提高灵敏度的效果

Active Publication Date: 2013-02-20
SONY GRP CORP
View PDF9 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When comparing a CCD image sensor and a MOS image sensor, a CCD image sensor may require a high driving voltage to deliver signal charges, therefore, the power supply voltage for a CCD image sensor may be higher than that of a MOS image sensor

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solid-state imaging device and camera
  • Solid-state imaging device and camera
  • Solid-state imaging device and camera

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] The conversion efficiency of photoelectric conversion in converting electric charge into signal voltage has been studied. Specifically, the photoelectrically converted charges are converted into voltages and output as pixel signals from circuits of the MOS image sensor. Therefore, even when the number of electrons (charge amount) per pixel is small, if the conversion efficiency of the signal voltage representing each charge is increased, the number reduction caused by the reduction in the area of ​​the photodiode can be obtained compensate.

[0031] The conversion efficiency η is defined by the following equation (1). The unit is μV / e:

[0032] [equation 1]

[0033] η = q C FD G [ μV / e ]

[0034] q: amount of charge per electron

[0035] C FD : The total capacitance associated with the floating diffusion

[0...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A solid-state imaging device and a camera are provided. The solid-state imaging device includes: pixels arrayed; a photoelectric conversion element in each of the pixels; a read transistor for reading electric charges photoelectrically-converted in the photoelectric conversion elements to a floating diffusion portion; a shallow trench element isolation region bordering the floating diffusion portion; and an impurity diffusion isolation region for element isolation regions other than the shallow trench element isolation region.

Description

[0001] Instructions for Divisional Application [0002] This application is a divisional application of Chinese Invention Patent Application No. 200810008292.8 with the filing date of February 15, 2008, entitled "Solid State Imaging Device and Camera". technical field [0003] The present invention relates to a solid-state imaging device and a camera, and specifically to a MOS (Metal Oxide Semiconductor) solid-state imaging device and a camera. Background technique [0004] Solid-state imaging devices include charge-transfer solid-state imaging devices represented by CCD (Charge Coupled Device) image sensors and amplified solid-state imaging devices represented by MOS (Metal Oxide Semiconductor) image sensors such as CMOS (Complementary Metal Oxide Semiconductor) image sensors. Solid-state imaging devices. When comparing a CCD image sensor and a MOS image sensor, a CCD image sensor may require a high driving voltage to transfer signal charges, and therefore, a power supply...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N5/335H04N5/361H04N5/369H04N5/374H04N5/3745
CPCH01L27/14603H01L27/1463H01L27/14643H01L27/14689H01L27/14609H01L27/1461H01L27/14654H04N25/62H04N25/63H04N25/76H04N25/75
Inventor 糸长总一郎大屋雄
Owner SONY GRP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com