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High-density nano electrode array and preparation method thereof

A nano-electrode array and nano-array technology, applied in the field of micromachining, can solve the problems of limiting industrialization and application, poor uniformity and controllability, poor process compatibility, etc., and achieves excellent uniformity, high controllability of spacing and height , Efficient and fast cost effect

Active Publication Date: 2015-06-24
PEKING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above method has low yield, poor process compatibility, or the feature size is limited by the lithography line width, or the uniformity is poorly controllable, which limits its large-area industrialization promotion and application.

Method used

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  • High-density nano electrode array and preparation method thereof
  • High-density nano electrode array and preparation method thereof
  • High-density nano electrode array and preparation method thereof

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Embodiment Construction

[0026] In order to make the above objects, features and advantages of the present invention more comprehensible, the embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0027] The specific steps of the high-density nano-electrode array provided by the present invention and its preparation method are described below in conjunction with the accompanying drawings.

[0028] Referring to Figure 1, Figure 1(a) and Figure 1(b) are schematic diagrams of the structure of the high-density nano-electrode array of the present invention, and the nano-arrays are respectively: Figure 1(a) the nano-array is cone-shaped, Figure 1(b) Arrays are columnar.

[0029] Among them, the substrate 1 is a metal or semiconductor with good conductivity, with a thickness of 20 μm-2000 μm. The metal material is such as Au, Ag, Al, Ti, Pt, W, Cr, etc., and the semiconductor material is such as Si an...

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Abstract

The invention discloses a preparation method of a high-density nano electrode array. The preparation method comprises the following steps: uniformly and closely distributing nano metal particles on a metal or semiconductor substrate with good conductivity in a one-layer manner, enabling the nano metal particles and the substrate to be closely combined by a high-temperature annealing process, then etching the substrate by utilizing a plasma treatment process, and preparing the nano electrode array structure realizing high density and high depth-width ratio. The invention has the advantages that the nano-scale electrode array structure can be realized by utilizing the conventional microprocessing equipment with no need of special and expensive nano processing equipment, so that the cost is reduced; the process compatibility is good and large-area wafer-level processing can be realized; and an RIE (reactive ion etching) process and a DRIE (deep reactive ion etching) process are production processes with mature and reliable industry, and the etching depth of the substrate can be controlled by parameter control, i.e., the height of the nano array can be controlled. The preparation method can be applicable to the preparation of the nano electrode array under different needs.

Description

technical field [0001] The invention relates to the technical field of micromachining, in particular to a high-density nanometer electrode array and a preparation method thereof. Background technique [0002] Ultra-small electrodes, especially nano-electrodes, have a series of unique and excellent characteristics due to their characteristic scales at the micron, deep submicron and nanometer levels, such as high mass transfer rate, small time constant, low IR loss, long diameter The ratio is significantly improved and the electric field enhancement effect is excellent. Therefore, it has important application value in micro-total analysis system, trace substance detection, single cell and DNA detection and analysis, field emission and other photoelectric conversion devices, and related frontier fields. [0003] Since the 1970s, research on ultra-small electrodes has gradually developed, but with the rapid development of micro-nano electromechanical systems (MEMS / NEMS), especi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/04
Inventor 张海霞张晓升苏宗明金柏宏朱福运
Owner PEKING UNIV
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