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Quantum dot electroluminescent device and preparation method thereof

An electroluminescent device, quantum dot light emitting technology, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as difficult to achieve HOMO energy level matching, achieve high-efficiency injection and transmission, good color purity , good thermal stability effect

Inactive Publication Date: 2013-01-30
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, it is difficult for a single organic / polymer hole transport material to match the HOMO energy level of QDs

Method used

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  • Quantum dot electroluminescent device and preparation method thereof
  • Quantum dot electroluminescent device and preparation method thereof
  • Quantum dot electroluminescent device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The ITO glass is cleaned and dried by boiling with various solvents and deionized water ultrasonically. Then, the PEDOT:PSS film was covered on the ITO by the method of spin coating, the film thickness was 25nm, and the spin coating rate was 2000rpm. On the PEDOT:PSS film, continue to spin-coat a layer of 25nm thick poly-TPD film at a spin-coating rate of 3000rpm, then spin-coat a layer of 20nm-thick DNA-CTMA film on it at a spin-coating rate of 4000rpm, and then CdSe / CdS / ZnS (core / shell / shell) quantum dots were spin-coated on the DNA-CTMA film at a spin-coating rate of 1500rpm. In a high vacuum environment, TPBI, Alq 3 successively deposited on the QD layer, TPBI film thickness 15nm, Alq 3 The film thickness is 20nm, and the deposition rate is 0.1-0.4nm / s. in Alq 3 Continue thermally depositing a metal layer on top, the metal layer is composed of Ca / Al, and the deposition rate is 0.4-1.0nm / s. The turn-on voltage of the device is 3.2V, and the maximum brightness i...

Embodiment 2

[0036]The ITO glass is cleaned and dried by boiling with various solvents and deionized water ultrasonically. Then, the PEDOT:PSS thin film was covered on the ITO by the method of spin coating, the thickness of the film was 25nm, and the spin coating speed was 2000rpm. On the PEDOT:PSS film, continue to spin-coat a layer of 25nm thick PVK film at a spin-coating rate of 3000rpm, then spin-coat a layer of 20nm-thick DNA-CTMA film at a spin-coating rate of 4000rpm, and then CdSe / CdS / ZnS The (core / shell / shell) quantum dots were spin-coated on the DNA-CTMA film at a spin-coating rate of 1500 rpm. In a high vacuum environment, TPBI, Alq 3 successively deposited on the QD layer, TPBI film thickness 15nm, Alq 3 The film thickness is 20nm, and the deposition rate is 0.1-0.4nm / s. in Alq 3 Continue thermally depositing a metal layer on top, the metal layer is composed of Ca / Al, and the deposition rate is 0.4-1.0nm / s. The turn-on voltage of the device is 4.2V, and the maximum brightn...

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PUM

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Abstract

The invention discloses a quantum dot electroluminescent device and a preparation method thereof. The device comprises a first electrode layer, a second electrode layer as well as a hole injection layer, a hole transmission layer, an electron barrier layer, a quantum dot luminescent layer, a hole barrier layer and an electron transmission layer, wherein the hole injection layer, the hole transmission layer, the electron barrier layer, the quantum dot luminescent layer, the hole barrier layer and the electron transmission layer are sandwiched between the two electrode layers. The preparation method is characterized in that the electron barrier layer covers the hole transmission layer by utilizing a rotary coating method; the material of the electron barrier layer is preferably DNA-CTMA (deoxyribonucleic acid-cetyltrimethyl ammonium), thus the effective hole injection and efficient electron barrier are realized, and the device performances and luminescent color purity are improved greatly.

Description

technical field [0001] The invention relates to the technical field of quantum dot electroluminescence, in particular to a quantum dot electroluminescence device and a preparation method thereof. Background technique [0002] Quantum dots have the characteristics of narrow emission bandwidth, precisely adjustable emission wavelength, good light stability, and excellent compatibility with flexible substrates. These characteristics make the research and development of quantum dot light-emitting diodes (QD-LEDs) very rapid. QD-LEDs can be used in a wide range of applications, including color flat panel displays and solid-state planar lighting. Monodisperse colloidal quantum dots (QDs) synthesized using a low-cost solution method provide a series of new chromophores for QD-LEDs. Compared with organic / polymer chromophores, QD chromophores have narrow emission bandwidths, half-peak It has the advantages of less than 30nm width and continuously adjustable wavelength. In addition,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115
Inventor 孙清江张路高雷张毅
Owner SOUTHEAST UNIV
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