Modeling method for optical proximity correction process model

Abstract

The invention discloses a modeling method for an optical proximity correction process model. The method comprises the steps of measuring original data and line width roughness of a semiconductor process layer; and determining weighted values of all critical sizes according to the line width roughness of the measured value of each critical size, a datum line width roughness at design rule checking position of the semiconductor process layer and a datum weighted value at the design rule checking position of the semiconductor process layer. By introducing the line width roughness to determine the weighted values of all the critical sizes, to-be-measured data can be reduced; some unstable factors and random factors of process, measuring machines and measuring processes can be filtered; fitting time and convergence time of the process model establishment can be shortened; and simultaneously accuracy and reliable stability of the process model can be guaranteed.

Description

technical field [0001] The invention relates to a semiconductor integrated circuit manufacturing process method, in particular to a modeling method of an optical proximity correction (Optical Proximity Correction, OPC) process model. Background technique [0002] In the existing Optical Proximity Correction (OPC, Optical Proximity Correction) process, a large amount of lithography raw data needs to be collected to establish a process model, and the process model includes a post-lithography process model or a post-etching process model. The method of collecting a large amount of lithography raw data in the modeling method of the existing optical proximity effect correction process model is: for each feature pattern, use different exposure units on the same silicon wafer to measure its lithography critical dimension. , CD), and then take the average value of the critical dimension as the original data of each lithography; this acquisition method is used to avoid large measurem...

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Problems solved by technology

Therefore, the existing method may lead to different judgments by different observers due to individual subjective reasons; at the same time, for critical dimensions below certain design rules, the existing method of visual judgment is even more unscientific

There is also a considerable gap between the exposure capability of the lithography machine calculated by the theoretical formula and the exposure capability of the actual machine; and when collecting OPC data, it is impossible to collect FEM (Focus Energy Matrix) for the key dimensions of each lithography. Determine the lithography process window for these critical dimensions

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