Semiconductor light emitting device and manufacturing method thereof

Abstract

The invention provides a semiconductor light emitting device and a manufacturing method thereof. The semiconductor light emitting device comprises a second electrode, a first semiconductor layer of a first doped type, an active layer, a second semiconductor layer of a second doped type, a first degenerate semiconductor layer of a first doped type, a second degenerate semiconductor layer of a second doped type, and a first electrode electrically connected with the second degenerate semiconductor layer, wherein the first semiconductor layer of the first doped type is electrically connected with the second electrode; the active layer is formed on the first semiconductor layer; the second semiconductor layer of the second doped type is formed on the active layer; the first degenerate semiconductor layer of the first doped type is formed on the second semiconductor layer; and the second degenerate semiconductor layer of the second doped type is formed on the first degenerate semiconductor layer. According to the invention, a positively biased tunneling pn junction is inserted into the semiconductor light emitting device, thus the current distribution uniformity of a power type semiconductor light emitting device is greatly improved, and the current crowing effect is solved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor light emitting device and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, the application of semiconductor light emitting devices is becoming more and more extensive. The so-called semiconductor light-emitting devices, including semiconductor light-emitting diodes and laser diodes, are devices based on compound semiconductor materials and processed by epitaxy, die fabrication, and subsequent packaging. They are widely used in information processing and communication and other technical fields. [0003] For a semiconductor light-emitting device, the electrode area of ​​its light-emitting surface always only occupies a small part of its corresponding working area, and the current injected by the device tends to be concentrated near the electrode and cannot be effectively spread throughout the dev...

AI Technical Summary

Problems solved by technology

The current edge effect can easily cause local overheating and breakdown of the light-emitting device, which will reduce the working life of the device and limit the rated power of the device

In addition, the current edge effect will greatly reduce the luminous efficiency

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