Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High voltage LED (light-emitting diode) chip and manufacturing methods thereof

A technology of LED chips and manufacturing methods, applied in electrical components, electrical solid devices, circuits, etc., can solve the problems of heat dissipation, unreliable chip interconnection, etc., and achieves convenient electrode interconnection, low manufacturing cost, and solution Effects of production cost issues

Inactive Publication Date: 2013-01-16
郭文平
View PDF0 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem with this kind of high-voltage LED chip is that the interconnection between chips is very unreliable, and the problem of heat dissipation has not been effectively solved.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High voltage LED (light-emitting diode) chip and manufacturing methods thereof
  • High voltage LED (light-emitting diode) chip and manufacturing methods thereof
  • High voltage LED (light-emitting diode) chip and manufacturing methods thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The embodiments of the present invention will be further described below in conjunction with the accompanying drawings. It should be noted that the following descriptions are only to illustrate the principles of the present invention, rather than limiting the present invention and the descriptions of the following specific embodiments.

[0022] figure 1 Disclosed is a previous vertical structure LED chip. The LED chips containing the n-type semiconductor layer 102 and the p-type semiconductor layer 103 are respectively plated with a conductive electrode 101 and a reflective electrode 104, and then the reflective electrode 104 is bonded on the carrier substrate 105, and the conductive electrode 101 is bonded to the carrier substrate by putting gold wires 106 on it. connected to the other electrode.

[0023] figure 2 Disclosed are prior high voltage LED chips. Firstly, an LED epitaxial layer is grown on the substrate 204, and then the LED unit chips 202 are isolated ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a high voltage LED (light-emitting diode) chip and manufacturing method of the high voltage LED chip. The chip is in the following structure: a circuit comprising a plurality of LED unit chips in interconnection is distributed on one surface of a bearing base plate, and the LED unit chips are welded on the surface in an inversion way, wherein at least two of the LED unit chips are in series connection through electrodes on the first surface of the bearing base plate; two or more than two connecting electrodes are arranged on another surface of an insulating substrate; and circuits on the two surfaces of the insulating substrates are connected by filling through holes / metal. The invention also discloses multiple processes for manufacturing the chip.

Description

technical field [0001] The invention discloses a novel high-voltage light-emitting diode chip with good heat dissipation performance and high reliability and a manufacturing method, belonging to the technical field of semiconductor electronics. Background technique [0002] Semiconductor lighting is an emerging technology, which has outstanding advantages such as environmental protection, energy saving and safety, and is the star of hope for the new generation of lighting. Light-emitting diode (LED) is a light-emitting device that converts electrical energy into light energy. In practice, LEDs have been more and more widely used due to their outstanding energy-saving and environmental protection features, and have been expanded to include high-end applications such as automotive headlights and LCD backlights. Recently, they have begun to enter the general lighting market. [0003] However, as LEDs began to replace traditional incandescent and fluorescent lighting, several p...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/48H01L33/64H01L33/62H01L33/00
CPCH01L2224/16225H01L2224/48091H01L2224/48227H01L2224/48465H01L2224/73265
Inventor 郭文平
Owner 郭文平
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com