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Preparation method of textured AZO (aluminum-doped zinc oxide) transparent conductive film

A technology of transparent conductive film and suede, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of film etching waste and high film thickness requirements, and achieve the effects of avoiding waste, meeting technical needs, and reducing production costs

Active Publication Date: 2013-01-09
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD +1
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  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Aiming at the problems of high film thickness requirements and film etching waste in the existing film-forming process followed by acid etching, the present invention provides a method for preparing a suede AZO transparent conductive film. Completely avoid the waste of film thickness caused by etching, effectively reducing production costs

Method used

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  • Preparation method of textured AZO (aluminum-doped zinc oxide) transparent conductive film

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Embodiment Construction

[0016] The present invention corrodes the surface of high-alkali aluminosilicate glass to form a suede-like texture (similar to the surface texture of crystalline silicon), and then uses radio frequency magnetron sputtering technology to coat the surface of the glass with AZO transparent conductive film, and can grow according to the surface topography of the substrate, and finally directly form an AZO film with a textured structure, such as figure 1 Shown, concrete preparation method is as follows:

[0017] 1. Preparation of high alkali aluminosilicate glass substrate

[0018] Select 1000 grams of raw materials according to the following oxide mass percentages:

[0019] SiO 2 : 64%; Al 2 o 3 : 14%; MgO: 4%; Na 2 O: 12%; K 2 O: 2%; CaO: 2%; NaCl: 2%;

[0020] The raw material is melted in a platinum crucible at a temperature of 1640°C for 15 hours. After melting, the molten glass is hydraulically made into a plate-shaped glass product with a shape of 50×50mm 2 , and th...

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Abstract

The invention relates to a preparation method of a textured AZO (aluminum-doped zinc oxide) transparent conductive film. A high-alkali aluminosilicate glass substrate is subjected to texturing treatment to form a textured structure on the glass surface so as to provide foundation for the subsequent direct growth of the AZO film and the final formation of the textured surface, thereby implementing the textured structure of the directly growing AZO transparent conductive film on the glass surface, overcoming the defects of overhigh requirement for the thickness of the AZO transparent conductive film and waste of etching in the conventional technique of film formation before acid etching, and effectively lowering the production cost. The haze of the AZO transparent conductive film prepared by the method is 10-30%, the visible light transmittance is greater than or equal to 85%, and the square resistance is 8-15 ohm per square.

Description

technical field [0001] The invention relates to a silicon-based thin-film battery technology using an AZO transparent conductive film as a front electrode, in particular to a method for preparing a textured AZO transparent conductive film. Background technique [0002] AZO film (aluminum-doped zinc oxide) is prepared by magnetron sputtering, which is the most widely used due to its good repeatability, low temperature deposition, high deposition rate, good adhesion, and easy control of deposition parameters. At present, the mainstream method of preparing textured AZO mainly utilizes the surface etchability of the AZO film, and first uses the magnetron sputtering technology to sputter out an AZO film with good electrical and optical properties, and then etches the surface. achieve surface texturing. Surface treatment can be carried out by plasma etching, wet etching and other methods, among which wet etching technology is the most mature. Wet etching generally uses dilute hy...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C17/245H01L31/18H01L31/0224H01L31/0236
CPCY02E10/50Y02P70/50
Inventor 彭寿马立云崔介东王芸曹欣沈洪雪
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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