Biomimetic preparation method for passivation layer on surface of crystalline silicon solar cell

Abstract

The invention discloses a biomimetic preparation method for a passivation layer on the surface of a crystalline silicon solar cell, comprising the following steps of: performing pre-treatment on a silicon slice; adding silica powder, deionized water and boric acid powder in hexafluorosilicic acid solution respectively, and preparing silica deposition solution; and soaking the pre-treated silicon slice in the prepared silica deposition solution, keeping the temperature of the solution in a range from 20 to 80 DEG C, illuminating for 0.5 to 6 hours with an illumination intensity equivalent to the intensity of 0.5 to 3 suns, and depositing on the surface of the silicon slice so as to generate a silica thin film. The biomimetic preparation method disclosed by the invention has the following beneficial effects that a dangling bond on the surface of the silicon slice is passivated well, thus effectively prolonging the minority carrier lifetime and increasing the open-circuit voltage of the crystalline silicon solar cell, increasing the photoelectric conversion efficiency of the crystalline silicon solar cell, and decreasing the production cost of the crystalline silicon solar cell.

Description

technical field [0001] The invention relates to the technical field of preparation of crystalline silicon solar cells, in particular to a bionic preparation method of a passivation layer on the surface of a crystalline silicon solar cell. Background technique [0002] Crystalline silicon solar cells are currently the dominant photovoltaic device, occupying the first place in the total production and application, and will develop in the direction of higher efficiency and lower cost. The quality of the surface of crystalline silicon materials plays a vital role in the conversion efficiency of solar cells. This is because the surface defect density of crystalline silicon materials is very high, and there are a large number of dangling bonds, impurities and broken bonds, etc., which become carriers. The recombination center causes the minority carrier lifetime on the surface of the silicon wafer to be greatly reduced, so it is necessary to passivate the surface of the silicon wa...

AI Technical Summary

Problems solved by technology

[0004] In order to solve the problems of complex process equipment conditions and high production costs required by the existing silicon dioxide thin film growth methods, the present invention provides a bionic preparation method for the passivation layer on the surface of crystalline silicon solar cells with low production cost and improved photoelectric conversion efficiency

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