Carrier stored groove bipolar transistor

Abstract

The invention discloses a carrier stored groove bipolar transistor, belonging to the technical field of semiconductor power apparatus. Based on traditional CSTBT (Carrier Stored Trench Bipolar Transistor), the carrier stored groove bipolar transistor provided by the invention uses a thin N+ layer structure 21 on the tail end of a P-base area 6 groove to replace a small sacrificial P-base area, thereby further improving electron concentration of a carrier storage layer and a drift region; withstand voltage and turn-off characteristic of the apparatus cannot be affected when conducting voltage drop of IGBT (Insulated Gate Bipolar Transistor) is effectively reduced, thereby preferably improving a compromising relationship of conduction loss and turn-off loss.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to an insulated gate bipolar transistor (Insulate Gate Bipolar Transistor, referred to as IGBT), in particular to a carrier stored trench bipolar transistor (referred to as CSTBT). Background technique [0002] In recent years, with the rapid development of social economy, the increasing consumption of energy and the serious contradiction between energy supply and demand have become a bottleneck of social and economic development. On the one hand, the further development of social economy needs to vigorously develop new energy sources, such as wind energy, nuclear energy, tidal energy, etc., and on the other hand, it is necessary to vigorously develop energy-saving industries and technologies. Power electronics technology plays an important role in energy saving. It is a key component of mechanical automation, intelligent control and energy saving. Therefore, vigo...

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Problems solved by technology

However, because the N-type base region of NPT-IGBT is too thick, the actual turn-off loss of NPT-IGBT is much larger than the calculated value obtained from the usually defined turn-off loss, so it is necessary to further reduce the NPT-IGBT turn-off loss

On the other hand, while non-punch-through insulated gate bipolar transistors use transparent collector technology to increase switching speed, since there is no N-type buffer layer, the electric field will end at the N-type base region, thus forming a triangular electric field distribution , so in order to ensure the withstand voltage, a relatively wide N-type base region must be used, resulting in an increase in the on-resistance, which also increases the static loss

Especially when subjected to high voltage, the conductance modulation effect will be significantly weakened, especially in the N-base region and JFET region near the emitter, the increase in conduction loss will be more significant

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