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Image sensor with very high dynamics

A kind of technology of image sensor and sensor, applied in the field of image sensor

Inactive Publication Date: 2012-09-26
TELIDAS ETUVE SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These sensors do not operate well at low light levels

Method used

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  • Image sensor with very high dynamics
  • Image sensor with very high dynamics
  • Image sensor with very high dynamics

Examples

Experimental program
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Effect test

Embodiment Construction

[0027] exist figure 1 The main components of an example CMOS technology active pixel including electron multiplying amplification structures are depicted in .

[0028] The pixel is formed in a substrate 10, and the substrate 10 preferably includes a P-type lightly doped semiconductor active layer 12 (the symbol P- is used to indicate this weak doping), and the P-type lightly doped semiconductor active layer 12 is formed on a further at the surface of the heavily doped layer (P+). A pixel is isolated from adjacent pixels by an insulating barrier 13, which completely surrounds the pixel. The barrier layer may be an isolation trench above the P-well.

[0029] The pixel includes a photodiode region PHD whose perimeter follows the contour of the N-type semiconductor region implanted in the portion of the depth of the active layer 12 . This implanted region is topped by a P+ type surface region 16 which is held at zero reference potential. This is a so-called "pinned" photodiode...

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Abstract

The invention relates to an image sensor with active pixels. The image sensor includes active pixels for gathering images at very high and very low luminance level. Each pixel includes at least one photodiode (PHD), a charge storage node (18), an electron multiplication amplification structure (AMP), a unit for transferring electrons from the photodiode to the structure (TR1), a unit for transferring electrons from the amplification structure to the storage node after multiplication (TR2), a transistor for reinitializing the potential of the storage node (RS). The pixels are read by a reading circuit which samples the potential of the charge storage node after reinitialization and after transfer of the electrons into the storage node and which provides a corresponding illumination measurement. The sensor furthermore includes a unit for carrying out the integration of charge in two different durations in the course of one and the same frame, and for giving the amplification structure multiplication factors different to the charge integrated in the course of these durations.

Description

technical field [0001] The present invention relates to image sensors, and more particularly, to sensors intended to capture images at both very low and very high brightness levels. Background technique [0002] Most solid state electronic sensors operate well for average brightness levels. By greatly increasing the accumulation duration, they are also able to operate at low brightness levels, compromising the rate at which images are provided. Also, increasing the accumulation duration may not be compatible with the application. For example, surveillance cameras typically must provide 30 images per second, limiting the duration of accumulation. These sensors are also capable of operating when the brightness level is increased, except for a certain brightness at which the sensor is saturated. [0003] Certain sensors have been specifically designed to operate at low light levels. But when some points of the scene are bright, even for average brightness, they saturate ver...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04N5/355H04N5/378H04N5/3745H01L27/146
CPCH04N5/3745H04N5/35572H04N5/37452H04N5/35581H04N25/587H04N25/589H04N25/77H04N25/771H04N25/57
Inventor P·弗雷伊F·迈尔
Owner TELIDAS ETUVE SEMICON CO LTD
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