Manufacturing method of pixel structure

Abstract

The invention relates to a manufacturing method a pixel structure. The manufacturing method comprises the following steps of: firstly providing a substrate, forming a semiconductor layer provided with an active region and a storage capacitor region on a light-transmitting substrate, forming a source electrode and a drain electrode on the semiconductor layer, forming an isolation layer on the source electrode, the drain electrode and the semiconductor layer, then forming a grid electrode and a capacitance electrode on the isolation layer, wherein the grid electrode and the capacitance electrode are respectively arranged on corresponding positions in the active region and the storage capacitor region, and then sequentially forming a dielectric layer and a shielding layer on the grid electrode, the capacitance electrode and the isolation layer, thus a thin film transistor is formed, etching an opening pattern on the shielding layer, thus a contact window is formed, and finally forming a conducting layer on the shielding layer, thus the drain electrode is electrically connected with the conducting layer by virtue of the contact window, and the pixel structure is formed. The pixel structure disclosed by the invention can improve storage capacitance of the pixel structure without reducing aperture ratio and also can prevent outleakage of metal.

Description

[0001] This patent application is a divisional application of the Chinese patent application submitted on March 27, 2007 with the application number 200710091534.X and the title of the invention "Thin Film Transistor and Pixel Structure and Manufacturing Method". technical field [0002] The invention relates to a thin film transistor, a pixel structure, and a manufacturing method of the pixel structure. Background technique [0003] Generally, for the manufacturing process of PMOS transistors, masks must be used to define the P+ and P- regions in the photolithography process, and the general P-type transistor manufacturing includes forming a polysilicon layer and using masks to define its P+ and P- regions. , and then sequentially form an insulating layer, a gate, a dielectric layer, form a contact window in the dielectric layer, a source electrode, a drain electrode and an organic layer, and form another contact window in the organic layer layer, forming a conductive layer...

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Problems solved by technology

[0005] Although the above-mentioned prior art can produce a pixel structure, the process is complicated and cannot reduce the production cost and increase the output rate. Therefore, the prior art cannot meet the needs of users in actual use.

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