Preparation method of nitrogen-doped tin dioxide film

A tin dioxide and nitrogen doping technology, applied in cable/conductor manufacturing, conductive layer on insulating carrier, ion implantation plating, etc. The effect of extensive, simple and easy-to-control preparation process

Inactive Publication Date: 2012-08-22
SOUTHEAST UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the doped SnO existing in the prior art 2 Due to the shortcomings of thin film polluting the environment and high manufa...

Method used

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  • Preparation method of nitrogen-doped tin dioxide film
  • Preparation method of nitrogen-doped tin dioxide film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] Clean the glass substrate, dry it with nitrogen, put it into the sample stage, and install it in the sputtering chamber of the magnetron sputtering apparatus;

[0025] ●Evacuate the vacuum chamber 6×10 -4 Pa, according to a certain volume ratio O: N = 1:99 into O 2 (purity 99.99%) and N 2 (purity 99.99%) mixed gas, control the air pressure in the sputtering chamber at 5Pa;

[0026] ●Turn on the RF power supply and the filament switch to start the glow, the incident power is 120W, and the sputtering pressure is 1.5Pa;

[0027] ●Pre-sputter the substrate for 30 minutes, and adjust the substrate heating temperature to 400°C;

[0028] Thin film deposition: the sputtering rate is 10-12nm / min, the time is controlled at 30min; the film thickness is 300nm

[0029] Annealing after film deposition: keep warm for 20 minutes at 400°C in an oxidizing atmosphere;

[0030] The resistivity of 2.0×10 can be obtained -3 Ω·cm, visible light transmittance 77%, stable performance, tra...

Embodiment 2

[0032] 1) Clean the glass substrate, dry it with nitrogen, put it into the sample stage, and install it in the sputtering chamber of the magnetron sputtering apparatus;

[0033] 2) Vacuum the vacuum chamber to 6×10 -4 Pa, according to a certain volume ratio O: N = 3:97 into O 2 (purity 99.99%) and N 2 (purity 99.99%) mixed gas, control the air pressure in the sputtering chamber at 5Pa;

[0034] 3) Turn on the RF power supply and the filament switch to start the glow, the incident power is 100W, and the sputtering pressure is 1.5Pa;

[0035] 4) Perform pre-sputtering on the substrate for 30 minutes, and adjust the heating temperature of the substrate to 400°C;

[0036] 5) Thin film deposition: the sputtering rate is 8-10nm / min, the time is controlled at 25min; the film thickness is 200nm

[0037] 6) Annealing after film deposition: keep warm for 40 minutes at 500°C in an oxidizing atmosphere;

[0038] The resistivity of 2.4×10 can be obtained -3 Ω·cm, visible light transm...

Embodiment 3

[0040] 1) Clean the glass substrate, dry it with nitrogen, put it into the sample stage, and install it in the sputtering chamber of the magnetron sputtering apparatus;

[0041] 2) Vacuum the vacuum chamber to 6×10 -4 Pa, according to a certain volume ratio O:N=6:94 into O 2 (purity 99.99%) and N 2 (purity 99.99%) mixed gas, control the air pressure in the sputtering chamber at 5Pa;

[0042] 3) Turn on the RF power supply and the filament switch to start the glow, the incident power is 150W, and the sputtering pressure is 1.5Pa;

[0043] 4) Perform pre-sputtering on the substrate for 30 minutes, and adjust the heating temperature of the substrate to 400°C;

[0044] 5) Thin film deposition: the sputtering rate is 10-15nm / min, and the time is controlled at 10min; the film thickness is 100nm

[0045] 6) Annealing after film deposition: keep warm for 60 minutes at 400°C in an oxidizing atmosphere;

[0046] The resistivity of 8.2×10 can be obtained -3 Ω·cm, visible light tran...

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Abstract

The invention discloses a preparation method of a nitrogen-doped tin dioxide film. The tin dioxide film is prepared by a magnetron sputtering method; and in magnetron sputtering, the mixed gas of O2 and N2 is led in according to a proportion of O2:N2=(1-6):(99-94), and the air pressure in a magnetron sputtering room is controlled to be lower than or equal to 5Pa. In the invention, a nitrogen-doped SnO2 film is prepared by a reaction magnetron sputtering method; the preparation technology is simple and easy to control and is a basic technology for industrially producing a film at present; the nitrogen element is widely available, the cost is low, and the reaction product is nontoxic and pollution-free to the environment; and the resistivity of a transparent conductive film obtained by controlling the technological parameters is lower than 2.4x10<-3>(ohm).cm, and the visible light transmittance is greater than 80%, thus the requirements for the performance of a commercial transparent conductive film are met.

Description

technical field [0001] The invention relates to the preparation of a transparent conductive film, in particular to a preparation method of a nitrogen (N) doped tin dioxide film. Background technique [0002] Transparent Conducting Oxide (TCO) film, a material with both transparency and conductivity, is widely used in various portable electronic products (such as notebook computers, mobile phones, etc.), solar cells and other industries. For transparent conductive films with application value, it is generally believed that the resistivity should reach 10 -3 On the order of Ω·cm, the visible light transmittance should be greater than 80%. [0003] After years of research, ZnO, In 2 o 3 and SnO 2 The representative TCO film has been practically applied. Tin-doped In 2 o 3 Thin film (ITO) resistivity between 10 -3 ~10 -4 Ω·cm, with a visible light transmittance of more than 85%, is currently the most successful TCO film; aluminum-doped ZnO film (AZO) is a representative...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06H01B5/14H01B13/00
Inventor 方峰蒋建清张旭海丁啸雄
Owner SOUTHEAST UNIV
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