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Method for rapidly elevating reliability of SONOS (silicon-oxide-nitride-oxide-silicon) by measuring tunneling electric field

A reliability and electric field technology, which is applied in the field of rapid evaluation of SONOS reliability, can solve the problems of batch test application difficulty and long time consumption, and achieve the effect of batch test, shortening time and simplifying the process flow

Active Publication Date: 2012-07-25
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Description
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Problems solved by technology

The disadvantage of this method is that it takes a long time, and it usually takes 168 hours to complete the evaluation, which brings difficulties to the application of batch testing

Method used

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  • Method for rapidly elevating reliability of SONOS (silicon-oxide-nitride-oxide-silicon) by measuring tunneling electric field
  • Method for rapidly elevating reliability of SONOS (silicon-oxide-nitride-oxide-silicon) by measuring tunneling electric field
  • Method for rapidly elevating reliability of SONOS (silicon-oxide-nitride-oxide-silicon) by measuring tunneling electric field

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Embodiment Construction

[0024] In order to have a more specific understanding of the technical content, characteristics and effects of the present invention, now in conjunction with the accompanying drawings and embodiments, the detailed description is as follows:

[0025] The mechanism of electron / hole escape in SONOS devices is mainly divided into two parts: temperature-related items and time-related items. Among them, the part that has a greater impact on the Data Retention of SONOS devices is mainly some time-related items, that is, related to tunneling. items such as figure 1 Shown, including well-to-band tunneling (trap-to-bandtunneling, T-B), well-to-well tunneling (trap-to-trap tunneling, T-T), energy band to well tunneling (band to-trap tunneling, B-T ).

[0026] The tunneling electric field can be measured by Quantox (real-time measurement technology of oxide film electrical parameters). The measurement principle is that Quantox uses corona discharge to place charges on the ONO film and th...

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Abstract

The invention discloses a method for rapidly elevating the reliability of SONOS (silicon-oxide-nitride-oxide-silicon) by measuring a tunneling electric field. The method comprises the steps of measuring relevant parameters of an operating voltage window and a tunneling electric field window of the SONOS; completing the ONO (oxide-nitride-oxide) filming of the SONOS to be tested, then measuring the tunneling electric field window; deducting the operating voltage window of the SONOS to be tested according to the tunneling electric field window and the relevant parameters of the SONOS to be tested; and elevating the properties of the data retention of the SONOS to be tested according to the operating voltage window of the SONOS to be tested. According to the method, an electronic / hole escape mechanism of the SONOS device and a principle corresponding to a measuring method of the tunneling electric field are utilized, a positive tunneling electric field and a negative tunneling electric field of an ONO film are measured, and the properties of the data retention of the SONOS device are judged, so that the technique process of the elevation of the reliability is simplified, the elevation time is shortened, and the batch test is facilitated.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for quickly evaluating the reliability of SONOS by measuring the tunneling electric field. Background technique [0002] SONOS (Silicon-Oxide-Nitride-Oxide-Silicon, Silicon-Oxide-Nitride-Oxide-Polysilicon) flash memory device has become the main type of flash memory due to its good scaling characteristics and radiation resistance characteristics. one. However, there are still many problems in the application of SONOS flash memory devices. Among them, there are two main problems related to reliability: one is the Endurance (electrical erasing endurance) feature, which is to measure the performance of SONOS devices after multiple programming / erasing. The possible degradation of device characteristics; the second is the Data Retention (data retention) characteristic, which is to measure the data retention capability of SONOS devices without external power supply....

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/66G01R29/12
Inventor 缪燕孙勤姚毅
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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