SiC-graphene nano-composite and preparation method thereof
A nano-composite material and graphene technology, applied in the field of SiC-graphene nano-composite materials and its preparation, can solve problems such as complex processes, achieve the effects of simple process steps, low production costs, and stable physical and chemical structures and properties
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Embodiment 1
[0027] A SiC-graphene nanocomposite material of the present invention is a core-shell structure in which an outer shell covers a core, the inner core is SiC nanoparticles, and the outer shell is nano-graphite composed of graphene. SiC-graphene nanocomposites are generally spherical particles with a diameter of 100 nm to 300 nm and a feather-like surface. Graphene in nano-graphite has 8-15 layers and grows along the radial direction of SiC nanoparticles.
[0028] The above-mentioned SiC-graphene nanocomposite material is prepared through the following steps:
[0029] (1) Preparation:
[0030] a. Prepare the process unit: if figure 1 As shown, prepare a tubular chemical vapor deposition furnace 1 with an air inlet 11 and an air outlet 12 at both ends, place a graphite boat 3 in the tubular chemical vapor deposition furnace 1, and place graphite boats 3 sequentially along the airflow direction An alumina crucible 2 for accommodating raw materials and a graphite substrate 4 for...
Embodiment 2
[0040] A SiC-graphene nanocomposite material of the present invention is a core-shell structure in which an outer shell covers a core, the inner core is SiC nanoparticles, and the outer shell is nano-graphite composed of graphene. SiC-graphene nanocomposites are generally spherical particles with a diameter of 100 nm to 200 nm and a feather-like surface. Graphene in nano-graphite has 8-15 layers and grows along the radial direction of SiC nanoparticles.
[0041] The SiC-graphene nanocomposite material of the present embodiment is prepared through the following steps:
[0042] (1) Preparation: Same as Example 1.
[0043] (2) Precursor cracking:
[0044] c. Introduce high-purity nitrogen gas into the tubular chemical vapor deposition furnace 1, and repeat 2 to 3 times to exhaust the air in the furnace.
[0045] d. Heat the tubular chemical vapor deposition furnace 1 to 800°C at a temperature increase rate of 8°C / s, keep the nitrogen flow at 30 sccm to 50 sccm during the heati...
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