Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Shielding device, processing method and equipment, semiconductor equipment

A technology of shielding device and processing equipment, applied in semiconductor/solid-state device manufacturing, magnetic field/electric field shielding, electrical components, etc., can solve the problem of eliminating the conversion of magnetic field energy to heat, increasing equipment manufacturing and operating costs, increasing equipment operating costs, etc. problem, achieve the effect of reducing the loss of magnetic field energy, eliminating the conversion of heat, and eliminating the conversion

Active Publication Date: 2015-09-02
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This not only causes the temperature of the shielding device to be too high, but also causes a waste of magnetic field energy and increases the operating cost of the equipment
For this reason, some equipment currently uses water cooling devices to reduce the temperature of the shielding device, but this is only a remedial measure, which does not fundamentally eliminate the conversion of magnetic field energy into heat, and also increases the manufacturing and operating costs of the equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Shielding device, processing method and equipment, semiconductor equipment
  • Shielding device, processing method and equipment, semiconductor equipment
  • Shielding device, processing method and equipment, semiconductor equipment

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to enable those skilled in the art to better understand the technical solution of the present invention, the shielding device and the semiconductor device provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0030] figure 2 Schematic diagram of the structure of the semiconductor device provided by the present invention. see figure 2 , the reaction chamber of the semiconductor device includes a cylindrical ceramic cylinder 5 disposed on a base 6 . A lower electrode 12 is provided at the bottom of the ceramic cylinder 5 , and the lower electrode 12 is connected to the first radio frequency power source 8 through the first matcher 9 . A coil 13 for generating plasma is provided around the outside of the ceramic cylinder 5 , and the coil 13 is connected to a second radio frequency power source 10 through a second matcher 11 . An outer shield 14 is also provided outside the ceramic cylinder 5 for shi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a shielding apparatus, a processing method and a device, and a semiconductor device. The shielding apparatus comprises a shell, the shell is provided with a plurality of through holes, and a sidewall curve of the shell is parallel to a magnetic line of force in a magnetic field where the shell is located. The technical scheme of the invention can reduce the cutting area of the magnetic field and the shielding apparatus, thereby reducing the vortex in the shielding apparatus, and reducing, even eliminating the conversion from magnetic field energy to heat, so that the loss of the magnetic field energy can be reduced, and the problem of higher temperature of the shielding apparatus also can be solved completely.

Description

technical field [0001] The invention belongs to the field of semiconductor equipment, and relates to a shielding device, a method for processing the shielding device, processing equipment for processing the shielding device and semiconductor equipment containing the shielding device. Background technique [0002] With the advancement of technology, various types of plasma equipment have emerged according to different processing requirements, such as capacitively coupled plasma (CCP) equipment, inductively coupled plasma (ICP) equipment, and electron cyclotron resonance plasma (ECR) equipment, etc. , These devices can be used for physical vapor deposition (PVD), plasma etching, and plasma chemical vapor deposition (CVD). [0003] In practical applications, inductively coupled plasma equipment is often used to implement physical vapor deposition processes. see figure 1 , is a schematic diagram of the structure of an inductively coupled plasma device. The inductively coupled...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H05K9/00H01L21/00H01J37/32
Inventor 张良王一帆
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com