High-precision phase shift device of lateral shear interferometer

A transverse shearing and interferometer technology, applied in measuring devices, instruments, scientific instruments, etc., can solve the problems of low response frequency, large axial size, large size, etc., and achieve high dynamic response, compact axial size, high The effect of motion resolution

Inactive Publication Date: 2012-06-27
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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Problems solved by technology

[0006] In order to solve the problems existing in the prior art, the present invention provides a high-precision transverse shearing interferometer phase shifting device, which solves the existing problems in the prior art that cannot meet the requirements of the wave phase difference detection of the projection lithography objective lens, and the response frequency Problems with too low, oversized, small stroke and large axial dimensions

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  • High-precision phase shift device of lateral shear interferometer
  • High-precision phase shift device of lateral shear interferometer
  • High-precision phase shift device of lateral shear interferometer

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Embodiment Construction

[0017] The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

[0018] A high-precision transverse shearing interferometer phase shifting device, a shearing grating 1, a mask plate assembly and a base 4, the device also includes: a one-dimensional small-stroke high-resolution displacement assembly 2, a one-dimensional large-stroke displacement assembly 3 and Phase shifter leveling assembly 5; the shearing grating 1 is located in the one-dimensional small-stroke high-resolution displacement assembly 2 and fixed on the one-dimensional small-stroke high-resolution displacement assembly 2; the mask plate assembly is fixed on the one-dimensional small stroke On the fixed substrate 7 at the bottom of the high-resolution displacement assembly 2, it remains relatively stationary with the one-dimensional small-stroke high-resolution displacement assembly 2, and the one-dimensional small-stroke high-resolution displa...

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Abstract

The invention relates to a high-precision phase shift device of a lateral shear interferometer, which comprises a shear grating, a mask assembly, a base, a one-dimensional small travel high resolution displacement assembly, a one-dimensional big travel high resolution displacement assembly and a phase shifter leveling assembly. The shear grating is located in and fixed on the one-dimensional small travel high resolution displacement assembly, the mask assembly is fixed at the bottom of the one-dimensional small travel high resolution displacement assembly and keeps to be relative static with the one-dimensional small travel high resolution displacement assembly fixed on the one-dimensional big travel high resolution displacement assembly which is fixed on the base, and the phase shifter leveling assembly is connected with the bottom of the base. The high-precision phase shift device has the advantages of being ultrahigh in movement resolution, big in movement travel, high in dynamic response, capable of conducting high-precision fine tuning position in a relative large travel range, and compact in axial size simultaneously.

Description

technical field [0001] The invention relates to a high-precision phase shifting device in a transverse shearing interferometer, in particular to a high-precision transverse shearing interferometer phase shifting device. Background technique [0002] The field of modern semiconductor and microelectronics preparation industry is the center of research on related technologies such as optical technology, precision machinery and automatic control technology. In the manufacturing process of semiconductor devices, the photolithography process directly determines the size of the device, which is the core part of the entire microelectronics manufacturing process. The mask pattern copied in the lithography process is used as an etching mask in the further etching process, and the working wavelength of the lithography objective lens used in the optical lithography process determines the integration degree of the semiconductor device. The new generation of lithography objective lens wo...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01J9/02
Inventor 何煦向阳
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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