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Polishing solution for inhibiting electrochemical corrosion of phase change material

A polishing liquid and electrochemical technology, applied in polishing compositions containing abrasives, electrical components, etc., can solve the problems of phase change material layer loss and reduce the controllability of CMP process.

Inactive Publication Date: 2012-06-27
SHANGHAI XINANNA ELECTRONICS TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the CMP process of phase change material graphics, due to the difference in the activity of each element in the phase change material and the electrochemical difference between it and each metal (mainly the metal adhesion layer and the metal electrode), it is still often found after polishing. The phase change material layer is lost due to galvanic corrosion
When using conventional polishing fluids, galvanic corrosion often exists, reducing the controllability of the CMP process

Method used

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  • Polishing solution for inhibiting electrochemical corrosion of phase change material
  • Polishing solution for inhibiting electrochemical corrosion of phase change material
  • Polishing solution for inhibiting electrochemical corrosion of phase change material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] The polishing solution is composed of: 1wt% 120nm colloidal nano-silicon dioxide, 2wt% hydrogen peroxide, 1wt% ascorbic acid, the pH value is 3, and the balance is deionized water.

[0056] See the section of the GST graphic sheet after polishing figure 2 shown.

Embodiment 2

[0058] The polishing liquid is composed of: 3wt% 30nm colloidal nano-silicon dioxide, 5wt% hydrogen peroxide, 2wt% p-phenylenediamine, the pH value is 3, and the balance is deionized water.

[0059] See the section of the GST graphic sheet after polishing image 3 shown.

[0060] figure 1 The SEM cross-sectional photos of the phase change material GST graphic sheet after polishing with conventional polishing fluid are given. figure 1 In , the material in the top nanopore is the phase change material GST left after polishing, and the white shaded part directly below the GST is the bottom electrode contact. From figure 1 As can be seen in , after polishing, the edge portion of GST filled in the nanopores completely becomes a void, which is lost during the polishing process.

[0061] We analyzed that this defect was caused by the electrochemical difference between GST and metal contact, so we tried different electrochemical inhibitors to narrow the redox potential between GST...

Embodiment 3

[0065]The polishing liquid is composed of: 3wt% 30nm colloidal nano-silica, 5wt% hydrogen peroxide, 1wt% arginine, 500ppm imidazole, 100ppm cetyltrimethylammonium bromide, Xwt% p-phenylenediamine, pH value is 3 , and the balance is deionized water.

[0066] In this example, the effect of adding different concentrations of p-phenylenediamine to the polishing liquid on the GST polishing parameters was examined. It can be seen from the figure that the addition of electrochemical corrosion inhibitors can not only inhibit electrochemical corrosion, but also maintain a high GST removal rate (>150nm / min) and high GST / silicon oxide concentration within a certain concentration range. Polishing selectivity ratio (>100).

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Abstract

The invention provides a polishing solution for inhibiting electrochemical corrosion of a phase change material, which comprises polishing particles, an electrochemical corrosion inhibitor and an aqueous medium; by referring the total weight of the polishing solution, the content of the polishing particles is 0.1-30wt% and the content of the electrochemical corrosion inhibitor is 0.0001-10wt%. The provided polishing solution is capable of carrying out polishing treatment to a phase change memory member, substantially inhibiting the electrochemical corrosion of the phase change material during a chemically mechanical polishing process, and substantially improving the chemically mechanical polishing process of a phase change material figure chip.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid capable of inhibiting electrochemical corrosion of phase change materials. Background technique [0002] As Samsung is about to announce the launch of 8Gb phase-change memory components with 20nm process technology at the 2012 International Solid-State Circuits Conference (ISSCC 2012), discussions on whether phase-change memory can be commercially launched are once again rampant. Due to the advantages of high-speed reading, high erasable times, non-volatility, small component size, low power consumption, strong vibration resistance and radiation resistance, phase change memory has been considered as the most competitive next-generation memory in recent years. A generation of non-volatile memory. [0003] In the process of constructing phase-change memory cells, chemical-mechanical polishing (CMP) process is a key step in order to conf...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L45/00
Inventor 王良咏刘卫丽宋志棠刘波钟旻
Owner SHANGHAI XINANNA ELECTRONICS TECH
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