Semiconductor substrate and preparation method thereof

Abstract

The invention relates to a semiconductor substrate and a preparation method thereof. The semiconductor substrate comprises a substrate, a first insulating protective layer, a metal layer, a second insulating protective layer, and a solder ball. More particularly, an electrical contact pad is arranged on the surface of the substrate; the first insulating protective layer is arranged on the substrate and enables the electrical contact pad to be exposed; the metal layer is arranged on the exposed electrical contact pad; the second insulating protective layer is arranged on the first insulating protective layer and enables a portion of the metal layer to be exposed; and the solder ball is arranged on the exposed metal layer. Because the second insulating protective layer is covered on a portion of the metal layer, when a temperature test is carried out on the semiconductor substrate, problems that the solder ball drops off or fractures and the like can be solved. Furthermore, the invention also provides a preparation method of the semiconductor substrate.

Description

Technical field [0001] The invention relates to a semiconductor substrate and a manufacturing method thereof, in particular to design a semiconductor substrate and a manufacturing method thereof to avoid cracking of solder balls. Background technique [0002] With the vigorous development of the electronics industry, electronic products have gradually entered the direction of multi-functional and high-performance research and development. The current design of semiconductor chips includes wire bonding and flip chip, etc., to connect the chip on the package substrate, and set a gold wire or conductive bump between the chip and the package substrate. Block to electrically connect the chip to the packaging substrate. [0003] In order to achieve multiple functions, high operating power, and long service life, the electrical stability of the chip is very important. Refer to US Patent No. 6,107,180 or US 6,111,321, or refer to figure 1 , Is a schematic cross-sectional view of an exist...

AI Technical Summary

Problems solved by technology

[0007] However, since the solder 160 is formed by brushing, it is not easy to fill the opening 150 completely, so that after the reflow soldering manufacturing method, the solder ball 16' is prone to voids, And it is easy to cause local melting (local melting) of the solder ball 16' due to electro migration (EM), so that the electrical contact pad 100' cannot be effectively connected when the subsequent flip chip (flipchip) manufacturing method is performed. to the packaging substrate, and thus cannot effectively produce electrical connections, thus reducing the yield of the product

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