Organic semiconductor material containing metalloporphyrin-triphenylamine and preparation method and application thereof
A technology of organic semiconductors and metalloporphyrins, applied in semiconductor/solid-state device manufacturing, semiconductor devices, luminescent materials, etc., can solve the problems of limiting the application range of organic semiconductor materials, lack of literature and patent reports, etc., and achieve good thermal stability and Effects of environmental stability, improvement of carrier mobility, and expansion of application range
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
preparation example Construction
[0040] The preparation method of the metal porphyrin-triphenylamine-containing organic semiconductor material designed in the present invention has the following steps: step S1, adding dibromotriphenylamine (Y) into the first organic solvent, cooling to -78°C, add n-BuLi dropwise, then react at -78°C for 0.5-5h, then add 2-isopropoxy-4,4,5,5-tetramethyl-1,3,2-di Xaborane (X) (the molar amount of which is 2 to 4 times the molar amount of dibromotriphenylamine (Y)), or the structural formula: The bispinacolate diboron) was reacted at -78°C for 0.5-5h, then naturally warmed to room temperature, and after 1-48h of reaction, 4,4'-bis(4,4,5,5-tetramethyl Base-1,3,2-dioxaborolane) triphenylamine (G); Wherein, the first organic solvent is at least one in anhydrous tetrahydrofuran, ether or dioxane, and the reaction formula is as follows:
[0041]
[0042]
[0043] Step S2, dissolving dipyrromethane (A), the first silafluorene derivative (B) and the second silafluorene derivati...
Embodiment 1
[0058] This embodiment discloses a 10,20-bis(9',9'-dioctyl)silafluorene zinc porphyrin-triphenylamine organic semiconductor material (n=40) with the following structure:
[0059]
[0060] The preparation steps of the above-mentioned organic semiconductor material are as follows:
[0061] 1. Synthesis of 4,4'-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane) triphenylamine
[0062]
[0063] Under the protection of nitrogen, add p-4,4'-dibromotriphenylamine (8.0g, 0.02mol) into the three-necked flask, add 150ml of tetrahydrofuran solvent, and slowly inject n-butyl Lithium (16.8mL, 2.5M, 0.04mol), continue to stir the reaction for 2h, inject 2-isopropoxy-4,4,5,5-tetramethyl-1,3,2 - Dioxaborolane (8.7 mL, 0.04 mol), stirred overnight at room temperature. Saturated aqueous sodium chloride (30ml) was added to terminate the reaction, extracted with chloroform, dried over anhydrous sodium sulfate, and filtered, the filtrate was collected and the solvent was evaporated off. Finally...
Embodiment 2
[0077] This embodiment discloses a 10-(9'-methyl-9'-hexadecyl)silafluorene-20-(9'-tridodecyl)silafluorene iron porphyrin-triphenylamine organic Semiconductor materials (n=56)
[0078]
[0079] The preparation steps of the above-mentioned organic semiconductor material are as follows:
[0080] 1. Synthesis of 4,4'-bis(4,4,5,5-tetramethyl-1,3,2-dioxaborolane) base triphenylamine
[0081] Its preparation sees embodiment 1 for details.
[0082] 2. Synthesis of 5-(9'-methyl-9'-hexadecyl)silafluorene-15-(9'-docosyl)silafluorene porphyrin
[0083]
[0084] Set up an anhydrous and oxygen-free device, weigh the intermediates 2-aldehyde-9-methyl-9-hexadecylsilafluorene (0.45g, 1mmol), 2-aldehyde-9-docosylsilafluorene ( 0.66g, 1mmol), dipyrromethane (0.30g, 2mmol), dissolved in 250ml of dichloromethane, blown nitrogen for 30min, added 2ml of trifluoroacetic acid into the syringe, stirred at 100°C for 1h, then added dichlorodicyanobenzene Quinone (DDQ) (1.8g, 8mmol), continue st...
PUM
Property | Measurement | Unit |
---|---|---|
Sheet resistance | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com