Memory element and memory device
A storage element and storage layer technology, applied in electrical elements, information storage, static memory, etc., can solve the problems of flow, address wiring thinning, difficult current, etc., to reduce power consumption, reduce writing Current, the effect of reducing power consumption
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[0070] Hereinafter, embodiments of the present invention will be described in the following order.
[0071] 1. Outline of the memory element of the embodiment
[0072] 2. Structure of Embodiment
[0073] 3. Experiment
[0074] 1. Outline of the memory element of the embodiment
[0075] First, an overview of a storage device according to an embodiment of the present invention will be described.
[0076] According to an embodiment of the present invention, recording of information is performed by reversing the magnetization direction of the storage layer of the storage element by the spin injection described above.
[0077] The storage layer is formed of a magnetic material such as a ferromagnetic layer, and holds information by the magnetization state (magnetization direction) of the magnetic material.
[0078] It will be described in detail later, but the memory element has a layer structure (an example of which is in figure 2 ), and includes a memory layer 17 and a magn...
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