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Infrared focal plane array device and manufacture method thereof

An infrared focal plane and array technology, applied in the field of infrared imaging, can solve problems such as difficult manufacturing, incompatibility, and complex resonance absorption structure, and achieve the effects of increasing area, reducing crosstalk, and improving infrared absorption efficiency

Active Publication Date: 2013-11-27
北京中科微投资管理有限责任公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The main problem is that the resonance absorption structure is very complex and not easy to manufacture, and the Polymide sacrificial layer material is not compatible with conventional IC processes

Method used

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  • Infrared focal plane array device and manufacture method thereof
  • Infrared focal plane array device and manufacture method thereof
  • Infrared focal plane array device and manufacture method thereof

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Embodiment Construction

[0039] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0040] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0041] Secondly, the present invention is described in detail in combination with schematic diagrams. When describing the embodiments of the present invention in detail, for the convenience of explanation, the cross-sectional view showing the device structure will not be partially enlarged according to the gener...

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Abstract

The invention provides an infrared focal plane array device, which comprises a substrate, a cavity arranged in the substrate, an infrared sensing layer suspended above the cavity, a cantilever beam suspended above the substrate and an infrared reflecting layer. One end of the cantilever beam is fixedly connected with the substrate, and the other end of the cantilever beam is fixedly connected with the infrared sensing layer. The infrared reflecting layer is covered above the infrared sensing layer and connected with the infrared sensing layer through a support column. A resonant cavity is arranged between the infrared reflecting layer and the infrared sensing layer. Accordingly, a manufacture method of the infrared focal plane array device is further provided. The infrared focal plane array device and the method of the infrared focal plane array device manufacture an infrared absorption structure in a way that the infrared sensing layer is adopted and the special infrared reflecting layer is manufactured on the infrared sensing layer. The infrared reflecting layer is in a simple film layer structure, thereby increasing area of the infrared reflecting layer, improving infrared absorption efficiency, simultaneously reducing manufacture difficulty of the infrared absorption structure, benefiting large-scale production and manufacture and reducing cost.

Description

technical field [0001] The invention relates to the technical field of infrared imaging, in particular to an infrared focal plane array device and a manufacturing method thereof. Background technique [0002] Infrared imaging technology is widely used in military, industrial, agricultural, medical, forest fire prevention, environmental protection and other fields. The core component of infrared imaging device is Infrared Focal Plane Array (IRFPA). According to the classification of working principle, infrared imaging devices can be divided into: photon infrared detectors and uncooled infrared detectors. [0003] Photon-type infrared detectors use narrow bandgap semiconductor materials, such as HgCdTe, InSb, etc., and use the photoelectric effect to realize the conversion of infrared light signals into electrical signals. Therefore, to work at a temperature of 77K or lower, this requires a heavy and Complex refrigeration equipment makes it difficult to miniaturize this infra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/101H01L31/18G01J5/20
CPCY02P70/50
Inventor 欧文刘战峰
Owner 北京中科微投资管理有限责任公司
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