Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Assembly process for IGBT (insulated gate bipolar transistor)

A process and station technology, applied in the field of IGBT assembly process, can solve the problems of products not reaching the professional level, affecting product quality, and damage to the surface of components, so as to save time in finding materials and tools, improve On-site management level and the effect of improving work efficiency

Active Publication Date: 2014-06-25
CHAJNA MAJNING DRAJVS EHND AUTOMEHJSHN KO
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the production method of high-precision devices such as IGBT is to use one person to operate multiple tasks, which is likely to cause irregular assembly actions, and the assembled products cannot reach the professional level, which affects product quality. There is no professional working platform for the existing operations. Due to the radiator and IGBT has very strict requirements on surface flatness, so if there is no professional working platform, the surface of components will be damaged, resulting in the performance of components being affected, and the existing working method does not have proper protection in transportation Measures, such as the weight of the radiator is still quite large, but there is no suitable means of transportation, the workers carry the radiator or IGBT with bare hands, once an accident occurs, the components will be damaged, and the cost of the IGBT is very high, once it is damaged, it cannot be used , will cause considerable economic loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Assembly process for IGBT (insulated gate bipolar transistor)
  • Assembly process for IGBT (insulated gate bipolar transistor)
  • Assembly process for IGBT (insulated gate bipolar transistor)

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to deepen the understanding of the present invention, the present invention will be further described below in conjunction with the embodiments and accompanying drawings. The embodiments are only used to explain the present invention and do not constitute a limitation to the protection scope of the present invention.

[0030] Such as Figures 1 to 5 It shows a specific embodiment of an IGBT assembly process flow of the present invention: an IGBT assembly process flow, 6 station points are set during the assembly process, and work stations are respectively set at each corresponding station point. Appliance area, and set up an inspector, including the following process steps:

[0031] (1) Set station 1 and apply insulating silicone grease;

[0032] ① Buckle the IGBT upside down on the special fixed tooling bracket, and pay attention to prevent collision, friction, etc.;

[0033] ② Before applying insulating silicone grease, use a clean cotton cloth or use a ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an assembly process for an IGBT (insulated gate bipolar transistor). During the assembly process, a plurality of working position points are set, a working position device region is arranged in each corresponding working position point, and several inspectors are assigned. The assembly process for the IGBT comprises the following steps of: (1) setting a working position 1 where insulating silicone grease is coated; (2) setting a working position 2 where the IGBT and a radiator are pre-fastened; (3) setting a working position 3 where the radiator is fastened; (4) setting a working position 4 where heating resistors are assembled in the preset positions; (5) setting a working position 5 where a driving circuit board is fixed; (6) setting a working position 6 where the modular internal wiring of the component formed in the step (5) is completed; and after the above steps are completed in order, delivering the semi-finished products to a storage region. The process improves quality control and increases work efficiency.

Description

technical field [0001] The invention relates to the field of processing high-precision devices such as electronic components, in particular to an IGBT assembly process flow. Background technique [0002] At present, the production method of high-precision devices such as IGBT is to use one person to operate multiple tasks, which is likely to cause irregular assembly actions, and the assembled products cannot reach the professional level, which affects product quality. There is no professional working platform for the existing operations. Due to the radiator and IGBT has very strict requirements on surface flatness, so if there is no professional working platform, the surface of components will be damaged, resulting in the performance of components being affected, and the existing working method does not have proper protection in transportation Measures, such as the weight of the radiator is still quite large, but there is no suitable means of transportation, the workers carr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50
Inventor 谭国俊陈家兴郭爱芹
Owner CHAJNA MAJNING DRAJVS EHND AUTOMEHJSHN KO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com