Light-emitting diode with region protection layer

Abstract

The invention provides a light-emitting diode with a region protection layer. According to the embodiment of the invention, the light-emitting diode comprises a substrate, a light-emitting lamination layer which is located above the substrate, an electrode group which is located above the light-emitting lamination layer, and a first protecting layer, wherein the light-emitting lamination layer comprises an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer at least; the electrode group comprises an N-type electrode and a P-type electrode, wherein the N-type semiconductor layer comprises an exposed region provided with an N-type electrode; and the first protection layer is distributed on the side wall on the junction of the light-emitting lamination layer and the exposed region to cover and protect a PN connection face formed between the P-type semiconductor layer and the N-type semiconductor layer on the side wall of the light-emitting lamination layer. According to the invention, the protection layer covers regionally so that the influence on the brightness of the light-emitting diode is smaller; and furthermore, a wiring region of the electrode group is not covered, therefore, the wire bonding force is not influenced by reducing an exposed area of the electrode group.

Description

technical field [0001] The invention relates to a light-emitting diode, in particular to a light-emitting diode with a region protection layer, so that the light-emitting diode has less influence on the brightness and the bonding force of the wiring. Background technique [0002] The principle of light emitting diode (Light Emitting Diode, LED) is to use an external voltage to cause electrons and holes in the light emitting layer to combine and release energy in the form of light. Due to high luminous efficiency, long life, small size, low power consumption and good color performance, light-emitting diodes have widely replaced the existing light sources under today's demand for environmental protection and energy saving. [0003] Figure 1A A schematic diagram showing the three-dimensional structure of an existing light-emitting diode, on a substrate (substrate) 10 , a light-emitting laminated layer 11 is grown one by one by a semiconductor process, and an electrode group 12...

AI Technical Summary

Problems solved by technology

[0005] However, if Figure 1B As shown, except for the exposed part of the pad region 123 and the N-type electrode 121, the protective layer 13 in the prior art is distributed in layers on the entire area of ​​the light-emitting surface, so it is easy to cause the light-emitting diode 1 to be blocked by the protective layer 13. , so that the light is disturbed, thereby reducing the light extraction efficiency of the light emitting diode 1

In addition, in the encapsulation and bonding process, because the protective layer 13 covers part of the upper surface of the N-type electrode 121, the area where the N-type electrode 121 is exposed for bonding will be reduced, thus causing the N-type electrode 1 to be damaged when the light-emitting diode 1 is packaged and bonded. The bonding force between the electrode 121 and the metal wire decreases accordingly, and the risk of pad peeling increases

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