Charge pump system and method for generating reading and writing operation word line voltage by aid of same and memory

Abstract

The invention relates to a charge pump system, a method for generating reading and writing operation word line voltage by the aid of the same and a memory. The charge pump system comprises a standby mode charge pump, a work mode charge pump, a controlled switch, a load capacitor, a first voltage division circuit, a second voltage division circuit, a first comparator, a second comparator, an OR gate circuit and an oscillator, the standby mode charge pump is controlled by standby enable signals, the work mode charge pump and the controlled switch are controlled by work enable signals, output ends of the two charge pumps are connected, the load capacitor is respectively connected with the output ends of the two charge pumps and the ground, an output end of the standby mode charge pump is connected with the first voltage division circuit, two ends of the controlled switch are respectively connected with the output end of the work mode charge pump and the second voltage division circuit, the first comparator and the second comparator respectively compare corresponding reference voltages with outputs of the corresponding voltage division circuits, the OR gate circuit controls operation of the oscillator according to outputs of the two comparators, and an output end of the oscillator is connected with input ends of the two charge pumps. By the aid of the charge pump system, the method and the memory, generation speed of the reading and writing operation word line voltage can be increased.

Description

technical field [0001] The invention relates to the technical field of read and write operations of memory chips, in particular to a charge pump system, a method for generating a word line voltage for read and write operations by using the charge pump system, and a memory including the charge pump system. Background technique [0002] Fast reading and writing of storage units has always been the pursuit goal of high-speed memory chips (such as FLASH, etc.). The read and write operation word line voltage establishment time on the word line of the memory cell is an important factor restricting the read and write speed. In high-speed memory chips, the read and write operation word line voltage is generally above 3V. For its application at low power supply voltage (below 3V), a charge pump is required to generate the read and write operation word line voltage. [0003] figure 1 A structural diagram of a charge pump system for generating a word line voltage for read and write o...

AI Technical Summary

Problems solved by technology

With the change of memory chip application requirements, memory chips with low power supply voltage (such as power supply voltage lower than 1.8V) gradually become the direction of design and development. decrease, thus using figure 1 In the prior art shown, it takes longer and longer to establish the word line voltage for read and write operations, which runs counter to the fast read and write goals of the memory chip

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