Ion implantation method and method for adjusting ion beam scanning rate
A scan rate, ion implantation technology, applied in the field of ion implantation
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[0050] Continuing the above description, in another embodiment, please refer to figure 1 and figure 2 , figure 2 is a schematic diagram of the target, the axis of rotation and the vertical axis. In this embodiment, the positional relationship between the target, the rotation axis and the vertical axis is as follows figure 2 As shown, the rotation axis (twist) 20 of the target 10 is perpendicular to the target 10 , and the rotation axis 20 is also perpendicular to the vertical axis 30 when the target 10 is not tilted. When the ion beam scans the target 10 in direction A, if the provided ion beam concentration distribution is asymmetric, as figure 1 Concentration curve B03, then, as long as the target 10 is rotated 180 degrees from the original angle, as shown in the double arrow direction B, the ion beam concentration distribution is as follows figure 1 The concentration curve B04 can produce a symmetrical dose distribution.
[0051] Next, in the second embodiment, t...
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