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Method for preparing indium tin oxide (ITO) film on resin substrate by using magnetron sputtering

A magnetron sputtering, resin-based technology, used in the field of preparing low-resistivity ITO films, can solve the problems of resistivity, transmittance and chemical stability that cannot meet production requirements, and achieve good chemical stability and high transmittance. The effect of low rate and resistivity

Active Publication Date: 2012-01-11
WUHU TOKEN SCI
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AI Technical Summary

Problems solved by technology

The existing online continuous vacuum magnetron sputtering coating process is to coat glass substrates. Due to the characteristics of the resin material, the original ITO film process is still used. The parameters such as resistivity, transmittance and chemical stability Neither can meet the production requirements

Method used

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Effect test

Embodiment Construction

[0015] The preparation of ITO film on the resin substrate is performed on the online vertical, continuous operation vacuum magnetron sputtering coating equipment, which mainly includes loading chamber, heating chamber, sputtering chamber, cooling chamber, unloading chamber, mechanical pump, low temperature Pumps, molecular pumps and related auxiliary components constitute a complete vacuum system, and adopt DC power supply.

[0016] The resin substrate is used to prepare the ITO film. The resin substrate used is composed of a glass substrate and a resin layer. The thickness of the glass substrate is 0.4-1.8mm, and the thickness of the resin layer is 1-5um. The production process is as follows: resin substrate inspection→cleaning→drying→inspection→loading→sending into the loading chamber→heating→sputter coating→cooling→out of film→inspection→packaging.

[0017] Specifically, the process steps are as follows:

[0018] Perform visual inspection on the resin substrate, and put th...

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Abstract

The present invention discloses a method for preparing an indium tin oxide (ITO) film on a resin substrate by using magnetron sputtering. The method comprises the following concrete steps: a, placing a resin substrate in a loading chamber of a magnetron sputtering device, carrying out vacuum pumping after sealing; b, conveying the resin substrate to a heating chamber, heating the substrate to a temperature of 150-250 DEG C; c, conveying the heated resin substrate to a sputtering chamber, adopting magnetron sputtering manner to carry out ITO film deposition, wherein the cathode direct current power supply input power in the sputtering chamber is 0.6-6 KW according to different ITO surface resistance values; d, conveying the film-coated substrate to a cooling chamber to carry out cooling; e, placing the cooled substrate in an unloading chamber, and unloading the substrate. With adopting the process method, the continuous vertical magnetron sputtering method is adopted for preparing the low-resistivity and high-quality ITO film on the resin substrate, and the prepared ITO film has performances of good resistance uniformity, low resistivity, high transmittance, good chemical stabilityand the like.

Description

technical field [0001] The invention relates to a method for preparing a low-resistivity ITO film on a resin substrate by using In-Line vacuum magnetron sputtering. Background technique [0002] Vacuum magnetron sputtering technology is a kind of plasma discharge under vacuum conditions, using electromagnetic field to control the movement of charged particles, bombarding the material to be plated, so as to deposit the required film on the substrate, which is usually used on flat panel display devices The process prepares an ITO (Indium Tin Oxides) transparent conductive film on the surface of the substrate. The existing online continuous vacuum magnetron sputtering coating process is to coat glass substrates. Due to the characteristics of the resin material, the original ITO film process is still used. The parameters such as resistivity, transmittance and chemical stability Neither can meet the production requirements. Therefore, it is necessary to develop a method special...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/06
Inventor 许沭华夏大映张兵何晏兵孔德兴康傲飞
Owner WUHU TOKEN SCI
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