Manufacturing method of tantalum target material

A production method and technology of tantalum target materials, which are applied in metal material coating process, ion implantation plating, coating, etc., can solve the problems of uneven structure, unstable target sputtering speed, sputtering speed instability, etc. , to achieve the effect of uniform organization structure, organization structure up and down, no layering

Active Publication Date: 2013-09-04
KONFOONG MATERIALS INTERNATIONAL CO LTD
View PDF1 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The tantalum target obtained by the above method can be used in the production process of 8-inch silicon wafers, but when the above-mentioned tantalum target is used in the production process of 12-inch silicon wafers, there will be instability to the sputtering speed of the target. Phenomenon
Investigating the reason, it was found that the internal structure of the above-mentioned tantalum target was not uniform, and delamination occurred. figure 2 A schematic diagram showing the internal structure of a tantalum target, where the shaded area represents an inhomogeneous region where the sputtering rate is unstable

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of tantalum target material
  • Manufacturing method of tantalum target material
  • Manufacturing method of tantalum target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0032] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0033] As mentioned in the background technology section, the internal structure of the tantalum target produced in the prior art is not uniform, and delamination occurs. In order to overcome the above-mentioned defects, the present invention provides a method for making a tantalum target. After plastic deformation, the tantalum target is obtained by hot rolling, thereby changing the internal structure of the tantalum target and making the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

A manufacturing method of a tantalum target material comprises the following steps: providing a metal material member, wherein the metal material member is tantalum or tantalum alloy; performing plastic deformation and hot rolling orderly of the metal material member to prepare a target material. With the invention, a tantalum target material with a uniform internal tissue structure and without stratification phenomenon is obtained.

Description

technical field [0001] The invention relates to the field of target manufacturing, in particular to a method for manufacturing a tantalum target. Background technique [0002] Most of the existing target processing methods are mainly to control the plastic deformation mode, deformation rate, and control the temperature change in the process. For example, Chinese patent application No. 00816972.1 introduces a method for preparing a sputtering target. The metal material is plastically processed with a processing percentage of at least 5% and a processing rate of at least 100% / second, and the temperature change during material processing is controlled, so that the grain size of the material can be well controlled. [0003] see figure 1 As shown, the tantalum target manufacturing method in the prior art includes the following steps: [0004] Step S1, providing tantalum material; [0005] Step S2, cutting the tantalum material; [0006] Step S3, performing plastic deformatio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/14
Inventor 姚力军潘杰王学泽周友平
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap