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Semiconductor device manufacturing method

A device manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of insufficient strength and low relative dielectric constant of SiOC films, and achieve high hardness and increased film stress.

Inactive Publication Date: 2011-12-21
FUJITSU SEMICON LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] SiOC films formed simply by CVD do not have sufficient strength, nor do they have a sufficiently low relative permittivity

Method used

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  • Semiconductor device manufacturing method
  • Semiconductor device manufacturing method
  • Semiconductor device manufacturing method

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Embodiment Construction

[0022] When UV curing is simply performed, the film stress of the interlayer insulating film is greatly increased, and the film is easily peeled off. Semiconductor devices of sufficiently high reliability cannot always be manufactured.

[0023] For example, UV curing is carried out to the SiOC interlayer insulating film, and the interlayer insulating film is heated at 400° C., so that the strength of the interlayer insulating film can be sufficiently improved, and the strength of the interlayer insulating film can also be sufficiently reduced. Relative permittivity. That is, UV curing at 400° C. sufficiently strengthens the bond in the interlayer insulating film, and allows the interlayer insulating film to have sufficient strength. UV curing at 400°C releases excess substances such as silicon hydroxyl (Si-OH) (silanol groups) from the interlayer insulating film to the outside of the interlayer insulating film, and the interlayer insulating film can have a sufficiently low re...

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Abstract

The invention discloses a method for manufacturing a semiconductor device, comprising: forming an insulating film containing silicon, oxygen and carbon on a semiconductor substrate by chemical vapor deposition; UV curing is performed on the insulating film being heated at a temperature of °C; and after the UV curing, helium plasma treatment is performed on the insulating film. The method provided by the invention can make the interlayer insulating film have high hardness without causing a large increase in film stress.

Description

technical field [0001] Embodiments discussed herein relate to a method of manufacturing a semiconductor device. Background technique [0002] Recently, the signal frequency of semiconductor devices has become higher and higher, which makes it particularly important to use low dielectric constant (low-k) materials as materials for interlayer insulating films. [0003] For example, an SiOC film is used as an insulating film having a low dielectric constant. Many voids are formed in the SiOC film, and these voids realize a relatively low relative permittivity. [0004] For example, the SiOC film is formed by CVD (Chemical Vapor Deposition). [0005] A SiOC film formed simply by CVD does not have sufficient strength, nor does it have a sufficiently low relative permittivity. In order to improve the strength and reduce the relative permittivity, the SiOC interlayer insulating film is UV-cured. [0006] Related references are as follows: [0007] Japanese Laid-Open Patent Pub...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/3105H01L21/316
CPCH01L21/02271H01L21/76826H01L21/76825H01L21/02126H01L21/76808H01L21/02348H01L21/0234H01L21/3105
Inventor 大仓嘉之森俊树
Owner FUJITSU SEMICON LTD
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