Solid-state imaging device, manufacturing method thereof, and imaging device

Abstract

A method for producing a solid-state imaging element which has photoconversion pixels, the method including forming an impurity region of the first conduction type and a second impurity region of the second conduction type on the impurity region of the first conduction type by ion implantation by using the same mask; forming on the surface of the semiconductor substrate a transfer gate constituting the charge transfer section which extends over the second impurity region of the second conduction type; forming a charge accumulating region of the first conduction type constituting the sensor section by ion implantation; and forming a first impurity region of the second conduction type, which has a higher impurity concentration than the second impurity region of the second conduction type, by ion implantation.

Description

[0001] Cross References to Related Applications [0002] The present application contains subject matter related to the disclosure of Japanese Priority Patent Application JP 2010-127324 filed in the Japan Patent Office on Jun. 2, 2010, the entire content of which is hereby incorporated by reference. technical field [0003] The present invention relates to a method of manufacturing a solid-state imaging device, a solid-state imaging device, and an imaging device equipped with the solid-state imaging device. Background technique [0004] In recent years, the field of CMOS (Complementary Metal Oxide Semiconductor) image sensors has developed toward an increase in the number of pixels and a reduction in pixel size. Unfortunately, the reduction in pixel size is accompanied by a significant degradation in pixel characteristics. [0005] A concept has been disclosed in which ion implantation is performed on each pixel in order to maintain or improve pixel characteristics such as ...

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Increased field strength causes pn junction leakage, which leads to white spots

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