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Preparation method of low-dimensional structure thermoelectric material

A thermoelectric material and dimensional structure technology, applied in the manufacture/processing of thermoelectric devices, etc., can solve problems such as low work efficiency and few types of related materials

Inactive Publication Date: 2011-11-30
SUZHOU HANSHEN THERMOELECTRICITY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage of thermoelectric devices is that their working efficiency is relatively low, and there are fewer types of related materials

Method used

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  • Preparation method of low-dimensional structure thermoelectric material

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Embodiment Construction

[0017] Preferred embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0018] The preparation method of the low-dimensional structure thermoelectric material comprises the following steps:

[0019] Firstly, the nanowire superlattice composite structure thermoelectric thin film is prepared based on the porous alumina template. The specific method is to adopt the cathode electrode preparation process of the cross structure, and through the electrochemical deposition method, with direct current or pulse excitation, respectively in the hole of the porous alumina template. P-type and N-type thermoelectric materials arranged alternately in the deposition process, real-time in-situ doping can be performed during the deposition process, such as figure 2 As shown, the p-type and n-type semiconductor nanowires deposited in the holes of the porous alumina template are arranged alternately. The porous alumina template her...

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Abstract

The invention discloses a method for preparing a thermoelectric material with a low-dimensional structure, which comprises the following steps: first, a nanowire superlattice composite structure thermoelectric film is prepared based on a porous alumina template, and then a quantum dot or Nanowire mosaic structure film. After testing, the dimensionless thermoelectric quality factor of the low-dimensional structure thermoelectric thin film prepared by the above method is greater than 2, and the thermoelectric conversion efficiency of the thermoelectric power generation device prepared with this material is greater than 10%, which is a kind of thermoelectric energy conversion material with very good prospects.

Description

technical field [0001] The invention relates to a method for preparing a thermoelectric material, in particular to a method for preparing a thermoelectric material with a low-dimensional structure. Background technique [0002] Thermoelectric materials (Thermoelectric Materials) are also called thermoelectric materials. Thermoelectric materials are mainly used to prepare thermoelectric refrigeration devices and thermoelectric power generation devices. The principle of temperature gradient field thermoelectric conversion is referred to as thermoelectric principle (Thermoelectric). Its discovery can be traced back to the 19th century. In 1822, Thomas Seebeck discovered the effect of thermoelectric force (the principle of thermoelectric material power generation, that is, the Seebeck principle); in 1834, Jean Peltier discovered the current The cooling effect at the junction interface of two different material conductors in the circuit (thermoelectric material refrigeration pri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L35/34H10N10/01
Inventor 刘宏
Owner SUZHOU HANSHEN THERMOELECTRICITY TECH
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