A water-based wire cutting fluid for silicon wafers

A water-based, cutting fluid technology, applied in the direction of lubricating compositions, etc., can solve the problems of reducing the bonding probability of soft and hard ions, poor dispersibility of blade materials, and troublesome cleaning of silicon wafers, and achieves excellent suspension dispersion, easy cleaning, and finished products. high rate effect

Inactive Publication Date: 2011-11-30
CHANGZHOU UNIV
View PDF8 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this water-based cutting fluid has not been widely used due to the poor dispersibility of the blade.
Invention patent (application number 200910304258.X) "wafer cutting fluid" is prepared from pure water, glycerin and silicate. The combination probability of soft and hard ions is reduced, and the probability of particle formation in the cutting fluid is also greatly reduced. However, due to the use of silicate, it will cause trouble for subsequent cleaning of silicon wafers.
Although the cutting fluids of the above-mentioned patents play a role in their respective fields, the stability needs to be further improved, and the water content is still low, resulting in high production costs.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Example 1 Prepare a water-based cutting fluid for wire cutting of 1200Kg silicon wafers.

[0019] First, weigh 16Kg of polyvinyl alcohol (molecular weight 100,000), dissolve it into 783.6Kg deionized water at a temperature of about 80°C, and stir for about 3 hours. After the polyvinyl alcohol is completely dissolved, add 0.4Kg of benzotriazole to prepare A dispersion of wire-cut silicon wafers was obtained. Weigh 400Kg of silicon carbide particles, fully stir and disperse for 2 hours to obtain a water-based cutting fluid for wire cutting of silicon wafers. The density of the water-based cutting fluid prepared by the above process is 1.630g / mL, and the viscosity is 42 mPa·S (25℃). In order to investigate the dispersion performance of silicon carbide particles in the dispersion liquid, the obtained cutting liquid was placed in a 25 mL colorimetric tube, and the dispersion performance was judged by observing the height of the silicon carbide sedimentation. The resul...

Embodiment 2

[0021] Prepare according to the method of Example 1, weigh 80Kg of polyvinyl alcohol (molecular weight 10000), dissolve it into deionized water with a temperature of about 80°C and 719.6Kg, stir for about 3 hours, and after the polyvinyl alcohol is completely dissolved, add 0.4 Kg benzotriazole to prepare the dispersion liquid of wire cutting of silicon wafers. Weigh 400Kg of silicon carbide particles, fully stir and disperse for 2 hours to obtain a water-based cutting fluid for wire cutting of silicon wafers. The density of the water-based cutting fluid prepared by the above process is 1.615g / mL, and the viscosity is 39 mPa·S (25℃). In order to investigate the dispersion performance of silicon carbide particles in the dispersion liquid, the obtained cutting liquid was placed in a 25 mL colorimetric tube, and the dispersion performance was judged by observing the height of the silicon carbide sedimentation. The results are listed in Table 1.

Embodiment 3

[0023] Prepare according to the method of Example 1, weigh 60Kg of polyvinyl alcohol (molecular weight 10,000) and 5Kg of polyvinyl alcohol (molecular weight 100,000), dissolve them into deionized water with a temperature of about 80°C and 734.6Kg, and stir for about 3 hours. After the polyvinyl alcohol was completely dissolved, 0.4Kg of benzotriazole was added to prepare a dispersion liquid for wire cutting of silicon wafers. Weigh 400Kg of silicon carbide particles, fully stir and disperse for 2 hours to obtain a water-based cutting fluid for wire cutting of silicon wafers. The density of the water-based cutting fluid prepared by the above process is 1.625g / mL and the viscosity is 45 mPa·S (25℃). In order to investigate the dispersion performance of silicon carbide particles in the dispersion liquid, the obtained cutting liquid was placed in a 25 mL colorimetric tube, and the dispersion performance was judged by observing the height of the silicon carbide sedimentation. ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Densityaaaaaaaaaa
Viscosityaaaaaaaaaa
Densityaaaaaaaaaa
Login to view more

Abstract

The invention provides a water-based cutting fluid for silicon wafers, which consists of the following raw materials in proportions by mass: polyvinyl alcohol, 2-10 parts, benzotriazole, 0.05 parts, deionized water, 89.95-98 servings. The water-based cutting fluid is characterized by low cost and environmental friendliness. Due to the good viscosity and dispersibility of the polyvinyl alcohol aqueous solution, the dispersibility of the blade in this cutting fluid is good, especially after settling, it is easier to redisperse. Using the water-based cutting fluid of the invention has a high qualified rate of finished products, and the silicon wafers after cutting are easier to clean.

Description

Technical field [0001] The present invention involves the composition of a water -based cutting solution.Suitable for the cutting processing process of solar silicon wafers. Background technique [0002] With the gradual shortage of global resources and the gradual deterioration of the environment, solar energy as a high -efficiency and clean energy source has received more and more attention. As a large producer of a global solar cell, the rapid development of the photovoltaic industry has made the production link of silicon wafers become the production linkVery important.Low -production costs, high performance, and light and efficient silicon wafers are the current development trend and requirements of the photovoltaic industry market, and the role of cutting solution during the production of silicon wafers is particularly important.With the development of cutting technology, the requirements for cutting liquids are getting higher and higher.The cutting solution should have app...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C10M173/02
Inventor 陈智栋吴伟峰韩国防王文昌
Owner CHANGZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap