Thick Film Spin Coating Method for Semiconductor Packaging

Abstract

The invention relates to the field of semiconductors, and specifically relates to a spin-coating method for forming a thick film for packaging a semiconductor through two stages of special spin-coating on a semiconductor wafer. Specifically, a special two-stage coating method is adopted for packaging the semiconductor. Through complementation of different film thicknesses and forms of the films coated in the two stages, homogeneity of the thick film for packaging is achieved. In the first coating stage, the cement is coated in a manner that the film turns thicker from the center to the edge, that is to say, the cement is coated in a manner that a cross section through the central point is in an inferior pattern. In the second coating stage, the cement is coated in a manner that the film turns thinner from the center to the edge, that is to say, the cement is coated in a manner that a cross section through the central point is in a convex pattern. With the two-stage special coating method provided by the invention, a film coating requirement of thick high-viscosity film packaging technology is satisfied, and a defect of prior two-stage coating technologies is solved.

Description

technical field [0001] The present invention relates to the field of semiconductors, in particular to a spin coating method for obtaining a thick adhesive film for thick semiconductor packaging through two special coating spin coating methods on a semiconductor wafer, in particular to a thick adhesive coating method for semiconductor packaging The special two-time glue coating method complements each other through two different film thicknesses and forms to achieve the uniformity of the thick glue film for final packaging. Background technique [0002] At present, the known thick glue coating process for semiconductor packaging requires secondary glue coating. The usual glue coating method will cause the middle thickness of the wafer to be higher than the thickness of the two sides after the second glue coating. This is because the second glue coating is different from the first glue coating. In the film forming process, the negative film of the first coating and film formin...

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Problems solved by technology

[0002] At present, the known thick glue coating process for semiconductor packaging requires secondary glue coating. The usual glue coating method will cause the middle thickness of the wafer to be higher than the thickness of the two sides after the second glue coating. This is because the second glue coating is different from the first glue coating. In the film forming process, the negative film of the first coating and film forming process is a wafer, which will not undergo secondary fusion with the photoresist. However, the secondary coating process is based on the previous film. The glue-coated film will have a secondary fusion physical effect with the first glue-coated film, especially the glue in the center. The glue in the middle of the wafer will fuse with the previous film for the longest time, resulting in the consumption of intermediate solvents during glue coating. Faster, the edge solvent consumption is slower, the concentration gradient of the solvent is poor, and the middle of the glue is obviously behind the two sides

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