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Method for preparing monolayer graphene with controllable stripe width by laser heating

A single-layer graphene, laser heating technology, applied in the field of graphene

Active Publication Date: 2011-11-23
CHANGCHUN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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specific Embodiment approach 2

[0023] 1. After the substrate is cleaned, a 500nm nickel film is coated on the surface. The substrate does not need to be heated during coating, and the substrate is protected by argon or nitrogen. Vacuum up to 2×10 -7 Torr, thickness uniformity ±5%.

[0024] 2. Introduce hydrogen and argon into the quartz tube furnace at 400sccm and 200sccm, and anneal the nickel-plated sapphire substrate at 900°C for 5-10 minutes to reunite the polycrystalline nickel grains and form Larger grains, which can increase the size of graphene grains grown on its surface.

[0025] 3. Put the nickel-plated substrate into a sealed quartz tube, place a temperature sensor to monitor the surface temperature of the substrate, turn on the laser, adjust the laser optical path and parameters, so that the fringe spots obtained through the grating can be evenly aligned with the substrate Turn on the laser at the bottom.

[0026] 4. Pass argon gas into the sealed quartz tube, and control its flow rate to 20...

specific Embodiment approach 3

[0031] 1. After the substrate is cleaned, a 500nm nickel film is coated on the surface. The substrate does not need to be heated during coating, and the substrate is protected by argon or nitrogen. Vacuum up to 2×10 -7 Torr, thickness uniformity ±5%.

[0032] 2. Introduce hydrogen and argon into the quartz tube furnace at 400sccm and 200sccm, and anneal the nickel-plated sapphire substrate at 900°C for 5-10 minutes to reunite the polycrystalline nickel grains and form Larger grains, which can increase the size of graphene grains grown on its surface.

[0033] 3. Put the nickel-plated substrate into a sealed quartz tube, place a temperature sensor to monitor the surface temperature of the substrate, turn on the laser, adjust the laser optical path and parameters, so that the fringe spots obtained through the grating can be evenly aligned with the substrate Turn on the laser at the bottom.

[0034] 4. Pass argon gas into the sealed quartz tube, and control its flow rate to 20...

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Abstract

The invention relates to a method for preparing monolayer graphene with controllable stripe width on a substrate by utilizing laser beam heating through a grating, belonging to the technical field of semiconductor novel materials. Graphene has higher electron transport properties, good response frequency and wider light band transparency, and can achieve the optimization of high-speed electronic device fabrication. Therefore, the realization of growth of high-quality stripe-shaped graphene materials is important for the development of electronic technology. Through the method, stripe-shaped monolayer graphene is prepared by heating the substrate with lasers through the grating, the lithography step is omitted, the method is performed by one step and is simple and feasible, and the growth materials are not polluted by additional materials; and at the same time, the laser beams can be quickly removed, the method has the characteristics of rapid temperature reduction and the like, the unnecessary multi-layer graphene growth can be reduced, the graphene monolayer growth is effectively realized, and the method is characterized by acquiring the discrete beams through the grating, thus obtaining the discrete stripe-shaped monolayer graphene.

Description

technical field [0001] The invention relates to a nickel-plated film on a substrate, and uses a laser heating method to prepare graphene with controllable stripe width, which belongs to the technical field of semiconductor materials. Background technique [0002] The processing limit of silicon materials is generally considered to be 10nm line width. Restricted by physical principles, it is impossible to produce products with stable performance and higher integration level if it is smaller than 10 nanometers. However, the emergence of graphene is expected to bring breakthroughs in the development of ultra-high-speed integrated circuits. [0003] Large-area grown graphene can be used as a substitute for Si materials in integrated circuits. It has high electron transport characteristics, good response frequency and wide optical band transparency, which can realize the optimization of high-speed electronic device preparation. [0004] At present, the main methods of growing g...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B31/04
Inventor 魏志鹏王勇波李金华方铉方芳王晓华王菲谭学垒韩作良
Owner CHANGCHUN UNIV OF SCI & TECH
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