Method for growing indium arsenide/indium gallium arsenide quantum well material on indium phosphide substrate

Abstract

The invention discloses a method for growing indium arsenide / indium gallium arsenide quantum well material on an indium phosphide substrate. The method comprises the following steps of: 1, selecting the substrate; and 2, sequentially growing a buffer layer, a lower waveguide layer, a dual-quantum well structure, an upper waveguide layer and a cover layer to finish growing the indium arsenide / indium gallium arsenide quantum well material on the indium phosphide substrate. In the method, an InAs quantum well with a proper thickness is grown at relatively lower temperature to realize the functions of reducing shortcomings and increasing a transition wavelength to 2.3 mu m under high strain condition.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser manufacturing, and in particular relates to a method for growing indium arsenide / indium gallium arsenide quantum well materials on an indium phosphide substrate. Background technique [0002] Mid-infrared lasers with wavelengths longer than 2 μm have received great attention in the scientific research community due to their potential applications in gas detection. In 1994, using InAs as well, In 0.53 Ga 0.47 The quantum well structure with As barrier layer was used in 1.7μm mid-infrared laser for the first time. Since then, there have been many reports on InAs quantum well lasers, especially in the field of atmospheric detection in the 2 μm band. And with the improvement of MOCVD (metal organic compound vapor deposition) technology, the final commercial use of 2μm band lasers has a good foundation. The use of MOCVD technology to grow InAs / InGaAs quantum well materials in the 2μm ba...

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Problems solved by technology

The use of MOCVD technology to grow InAs / InGaAs quantum well materials in the 2μm band requires attention to the following two issues: 1. InAs quantum well materials are easy to volatilize at high temperatures, so they need to be grown in a suitable temperature window (460°C-500°C); 2. .The strain of InAs quantum well material and InP substrate is as high as 3.2%. If the critical thickness is exceeded, defects will easily occur and the quality of the material will decline. On the other hand, if the thickness of InAs is too small, the wavelength transition will be directly restricted, and the thickness of InAs needs to be controlled.

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