Method for preparing crystallization rate of monocrystal silicon 110

Abstract

The invention relates to a method for preparing the crystallization rate of crystal orientation monocrystal silicon (110), which is characterized in that: a seed crystal of which the crystal orientation deviates an angle of X from the (110) direction is cut by adopting a monocrystal (110) or (100); and the seed crystal is subjected to seeding, and the seeding length is kept by more than 12 centimeters, wherein the X is between 1 and 9 degrees. In the method, a crystal axis of the seed crystal (110) deviates an angle X from the growth direction, dislocation can be discharged completely in the seeding process, and the led crystal with the crystal orientation (110) can grow in a dislocation-free mode, so the crystallization rate can be improved, and the yield can be ensured.

Description

technical field [0001] The invention relates to a preparation method for improving the crystallization rate of 110 single crystal silicon. Background technique [0002] Because the <111> crystal direction single crystal growth exclusion angle is 60 degrees, the <100> crystal direction single crystal growth exclusion angle is 90 degrees, and the <110> crystal direction single crystal growth exclusion angle is 0 degrees, Therefore, it is difficult to discharge dislocations in the <110> crystal orientation single crystal. Often the shoulders fall off after seeding or the crystal cannot grow after the diameter is equal, resulting in dislocations and drop buds, so that the crystal growth rate of the crystal is not high, resulting in <110> The crystallization rate of the crystal direction is too low. Contents of the invention [0003] The object of the present invention is to provide a preparation method for improving the crystallization rate of &l...

AI Technical Summary

Problems solved by technology

[0002] Because the crystal direction single crystal growth exclusion angle is 60 degrees, the crystal direction single crystal growth exclusion angle is 90 degrees, and the crystal direction single crystal growth exclusion angle is 0 degrees, Therefore, it is difficult to discharge dislocations in the crystal orientation single crystal. Often the shoulders fall off after seeding or the crystal cannot grow after the diameter is equal, resulting in dislocations and drop buds, so that the crystal growth rate of the crystal is not high, resulting in crystal direction crystal formation rate is too low