GeOI structure and formation method thereof

Abstract

The invention provides a formation method of GeOI, which comprises the following steps: forming a Ge-containing layer on a first substrate; adopting strontium (Sr) or barium (Ba) to process a first surface of the Ge-containing layer for forming a first passivated thin layer; overturning the first substrate, the Ge-containing layer and the first passivated thin layer and transferring to a silicon substrate with an oxide insulating layer on the surface; and removing the first substrate. In the embodiment of the invention, the passivated thin layer formed by a strontium germanide or a barium germanide belongs to the field of semiconductors, therefore, the interface state problem between a Ge material and an insulating oxide can be improved, the phenomena of electric leakage and scattering in the position of an interface can be reduced, and the migration performance of the Ge material can not be excessively reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor design and manufacture, in particular to a GeOI (Ge on insulator) structure and a forming method thereof. Background technique [0002] For a long time, the feature size of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) has been following the so-called Moore's law (Moore's law), and its working speed is getting faster and faster. However, for Si-based material itself As far as it is concerned, it is already close to the double limit of physics and technology. Therefore, various methods have been proposed in order to continuously improve the performance of MOSFET devices, and thus the development of MOSFET devices has entered a so-called post-Moore (More-Than-Moore) era. High-mobility channel engineering based on heterogeneous material structures, especially high-carrier mobility material systems such as Si-based Ge materials, is one of the effective technologies. For example, c...

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Problems solved by technology

[0004] The purpose of the present invention is to at least solve one of the above-mentioned technical defects, especially the defect that the interface state between Ge and the oxide insulator in the current GeOI structure is very poor

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