Printing registration method for crystalline silicon selective emitter battery

Abstract

The invention belongs to the technical field of manufacturing of crystalline silicon solar batteries, particularly relates to a printing registration method for a crystalline silicon selective emitter battery, and provides an accurate registration method aiming at a laser doped selective emitter crystalline silicon battery. The method comprises the following steps of: preparing a reducing reflection coating, and a laser doped and printing registration datum point, and performing accurate registration printing. By the method, the matching degree of a laser doped area and front silver grid line printing is greatly improved, the problem that printing registration is difficult during manufacturing of the crystalline silicon selective emitter battery is solved, the electrical performance of the crystalline silicon solar battery is improved, and the method is favorable for industrial production.

Description

technical field [0001] The invention belongs to the field of manufacturing crystalline silicon solar cells, and in particular relates to a printing alignment method for crystalline silicon selective emitter cells. Background technique [0002] With the depletion of fossil energy, solar cells, as a kind of green energy, have been rapidly developed. Crystalline silicon solar cells have become the mainstream in the field of solar cells. How to reduce the cost of solar cells and improve the efficiency of solar cells has become the focus of research on crystalline silicon solar cells at home and abroad. [0003] Selective emitter cells, compared with traditional process cells, have high efficiency and better electrical performance. In the preparation process of selective emitter solar cells, laser doping after diffusion is often used at present, and the alignment problem between the laser doped region and the printed electrode has become a bottleneck in the development of crysta...

AI Technical Summary

Problems solved by technology

In the preparation process of selective emitter solar cells, the method of laser doping after diffusion is often used at present, and the alignment problem between the laser doped region and the printed electrode has become a bottleneck in the development of crystalline silicon selective emitter solar cells

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