IGBT (insulated gate bipolar transistor) based drive circuit of control rod control system
A driving circuit and control system technology, applied in the control of nuclear reactions, nuclear power generation, reactors, etc., can solve the problems of large output current ripple, large equipment volume, slow rise and fall time of output current waveform, etc., to achieve rapid action , the effect of increasing the rate of ascent and descent
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[0030] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.
[0031] The invention is a driving circuit using a high-power insulated gate bipolar transistor IGBT as a driving device. The IGBT is a turn-off device that has developed rapidly in recent years. Compared with traditional thyristors and other devices, it has the characteristics of fast switching speed, simple control method, and low junction voltage, so it is widely used in the field of power electronics. The control of the output current can be realized by using p...
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