Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ordered structure array of two-dimensional hollow balls and preparing method thereof

A technology of ordered structure and hollow spheres, applied in the direction of nanostructure manufacturing, microstructure technology, microstructure devices, etc., can solve the problems of not being able to obtain hollow spheres, limiting superior performance and unique uses

Active Publication Date: 2011-06-01
ANHUI XINHE DEFENSE TECH JOINT CO LTD
View PDF1 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are deficiencies in both the two-dimensional ordered nanostructured metal material and its preparation method. First, the hollow metal spheres that constitute the two-dimensional ordered nanostructured metal material are only single-walled structures, rather than inner and outer walls. Hollow spheres with different structures, which limit its possible superior performance and unique uses; secondly, the preparation method cannot obtain hollow spheres with different structures on the inner and outer walls

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ordered structure array of two-dimensional hollow balls and preparing method thereof
  • Ordered structure array of two-dimensional hollow balls and preparing method thereof
  • Ordered structure array of two-dimensional hollow balls and preparing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] The concrete steps of preparation are:

[0025] Step 1, placing the conductive substrate with a single-layer colloidal crystal template made of polystyrene colloidal spheres with a diameter of 2000nm on it under a pressure of 5Pa, and depositing a layer of gold film with a thickness of 5nm by ion sputtering, A gold film wall array is obtained; wherein, the conductive substrate is conductive glass.

[0026] Step 2, first place the conductive substrate with the gold film wall array on it in the electrolyte solution at a temperature of 10°C, use it as a working electrode, and deposit it at a deposition current density of -1.0mA / cm 2 Next, the three-electrode method was used for electrodeposition for 10 seconds to obtain a composite array; wherein, the electrolyte was a metal gold electrolyte, the counter electrode was a graphite electrode during the three-electrode method electrodeposition, and the reference electrode was a saturated calomel electrode. Then the composite ...

Embodiment 2

[0029] The concrete steps of preparation are:

[0030] Step 1, placing the conductive substrate with a single-layer colloidal crystal template composed of polystyrene colloidal spheres with a diameter of 2000nm on it under a pressure of 6Pa, and depositing a layer of gold film with a thickness of 8nm by ion sputtering, A gold film wall array is obtained; wherein, the conductive substrate is conductive glass.

[0031] Step 2, first place the conductive substrate with the gold film wall array on it in the electrolyte solution at a temperature of 25°C, use it as a working electrode, and deposit it at a deposition current density of -0.4mA / cm 2 The complex array was obtained by using the three-electrode method for electrodeposition for 200 s. The electrolyte was a metal gold electrolyte, the counter electrode was a graphite electrode, and the reference electrode was a saturated calomel electrode. Then the composite array was placed in dichloromethane solvent to remove the polysty...

Embodiment 3

[0034] The concrete steps of preparation are:

[0035] Step 1, placing the conductive substrate with a single-layer colloidal crystal template composed of polystyrene colloidal spheres with a diameter of 2000nm on it under a pressure of 8Pa, and depositing a layer of gold film with a thickness of 10nm by ion sputtering, A gold film wall array is obtained; wherein, the conductive substrate is conductive glass.

[0036] Step 2, first place the conductive substrate with the gold film wall array on it in the electrolyte solution at a temperature of 50°C, use it as a working electrode, and deposit it at a deposition current density of -0.025mA / cm 2 The complex array was obtained by electrodeposition by three-electrode method for 30 minutes; the electrolyte was metal gold electrolyte, the counter electrode was graphite electrode and the reference electrode was saturated calomel electrode during electrodeposition by three-electrode method. Then the composite array was placed in dich...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The present invention discloses an ordered structure array of two-dimensional hollow balls and a preparing method thereof. The array is a single-layer hollow ball array which is provided with an ordered hexagonal arrangement on a substrate. The outer diameter of each hollow ball in the single-layer hollow ball array is 220nm-10.8mu m. An outer surface of each ball is a rough surface. Each hollow ball is composed of a gold metal inner surface and metal gold or polypyrrole or zinc oxide which is coated on the gold metal inner surface. The rough surface is composed of particle-shaped objects or vertical rod-shaped objects. The method comprises the following steps: performing ion sputtering on a conductive substrate which is provided with a single-layer colloid crystal template for depositinga gold film and obtaining a gold film wall array; then placing the conductive substrate which is adhered with the gold film array into electrolyte; performing electrodeposition for 10s-3h with a deposition current density of -1.0-1.0Ma / cm2 for obtaining a complex array; then placing the complex array into a dichloromethane solvent for removing polystyrene colloid balls and preparing the ordered structure array of the two-dimensional hollow balls. The ordered structure array of the two-dimensional hollow balls can be widely used for the following fields: medicament engineering, cosmetic, biotechnology, photocatalysis, photonic device, etc.

Description

technical field [0001] The invention relates to a hollow sphere ordered structure array and a preparation method thereof, in particular to a two-dimensional hollow sphere ordered structure array and a preparation method thereof. Background technique [0002] Hollow sphere structures, such as carriers and inner containers, micro-reaction chambers, etc., have attracted widespread attention due to their special structure and surface properties, and they are of great importance in pharmaceutical engineering, cosmetics, biotechnology, photocatalysis and photonic devices. application value. The application of hollow spheres is related to its material type and structure size, and is also closely related to the fine structure of the spherical shell. Hierarchical hollow spheres, whose shells are composed of nanoscale small units, such as nanoparticles, nanorods and nanosheets, will play an important role in the construction of nanomaterial devices. Recently, the synthesis of hierar...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B82B1/00B81B7/04B82B3/00B81C1/00
Inventor 段国韬罗媛媛刘广强吕方景蔡伟平
Owner ANHUI XINHE DEFENSE TECH JOINT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products