Nonvolatile memory and arrangement thereof

Abstract

The invention discloses a layout of a non-volatile memory. The layout includes a semiconductor substrate, a plurality of first-type doping wells, a plurality of first conductors, a plurality of second conductors, a plurality of first ion doping regions, a plurality of second ion doping regions, a plurality of word lines and Multiple bit lines. There are a plurality of isolation structures in the semiconductor substrate to divide the semiconductor substrate into a plurality of first transistor regions, a plurality of capacitor regions and a plurality of second transistor regions. Each capacitor region is located between the corresponding first transistor region and the second transistor region. A plurality of first-type doped wells are respectively disposed in a corresponding one of the capacitor regions. Each second ion-doped region is disposed in the first-type doping well between adjacent first conductors and second conductors, and each second ion-doped region simultaneously forms a first capacitor with the corresponding first conductor. A capacitor and a corresponding second capacitor part constitute a second capacitor.

Description

technical field [0001] The invention relates to a layout structure of a semiconductor element, and in particular to a layout of a non-volatile memory. Background technique [0002] The non-volatile memory (Non-Volatile Memory, NVM) device has the characteristic that the data stored in the device will not disappear due to the interruption of the power supply, so it has become one of the memory devices commonly used to store data at present. [0003] According to the limitation of the read and write times of the memory, non-volatile memory can be divided into: multi-time programmable memory (MTP memory) with repeatable read and write function and data that can only be provided once There are two types of one-time programmable memory (OTP memory) for writing. In addition, if it is distinguished from the device structure, it can be further divided into: double-poly non-volatile memory and single-poly non-volatile memory. [0004] Since the non-volatile memory is compatible wit...

AI Technical Summary

Problems solved by technology

However, in the advanced logic process, the process of using double-layer polysilicon non-volatile memory as embedded memory is complex and costly, and the component yield is not good

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